I-SiC igqunywe nge-Graphite substrate yeSemiconductor, i-Silicon carbide coating, i-MOCVD Susceptor

Inkcazelo emfutshane:

Ukufakwa kwe-SiC ye-Graphite substrate yezicelo ze-Semiconductor ivelisa inxalenye enobunyulu obuphezulu kunye nokumelana nomoya we-oxidizing.I-CVD SiC okanye i-CVI SiC isetyenziswa kwiGraphite yeendawo ezilula okanye ezintsonkothileyo zoyilo.Ukugquma kungasetyenziswa kubunzima obuhlukeneyo kunye neendawo ezinkulu kakhulu.

Indawo yemvelaphi:E-Zhejiang, eTshayina (eMaphandleni)

Inombolo yoMfanekiso:Inombolo yoMfanekiso:

Ukuqulunqwa kwemichiza:I-SiC eqatywe igraphite

Amandla e-Flexural:470Mpa

I-Thermal conductivity:300 W/mK

Umgangatho:Igqibelele

Umsebenzi:CVD-SiC

Isicelo:Semiconductor / Photovoltaic

Ubuninzi:3.21 g/cc

Ukwandiswa kweThermal:4 10-6/K

Uthuthu: <5ppm

Isampulu:Iyafumaneka

Ikhowudi ye-HS:6903100000

Thumela i-imeyile kuthi Khuphela njengePDF

Iinkcukacha zeMveliso

Iithegi zeMveliso

I-SiC igqunywe nge-Graphite substrate ye-Semiconductor, i-Silicon carbide coating,I-MOCVD Susceptor,
I-GaN epitaxy kwi-silicon, IC monocrystalline silicon epitaxy, LED chip epitaxy, I-MOCVD Susceptor, I-Silicon Carbide Coating, UV LED chip epitaxy,

Ukufakwa kwe-SiC ye-Graphite substrate yezicelo ze-Semiconductor ivelisa inxalenye enobunyulu obuphezulu kunye nokumelana nomoya we-oxidizing.
I-CVD SiC okanye i-CVI SiC isetyenziswa kwiGraphite yeendawo ezilula okanye ezintsonkothileyo zoyilo.Ukugquma kungasetyenziswa kubunzima obuhlukeneyo kunye neendawo ezinkulu kakhulu.

I-SiC yokwaleka / i-MOCVD igqunywe Susceptor

Iimbonakalo:
· Okugqwesileyo kweThermal Shock Resistance
· Okugqwesileyo koKuxhathisa ukothuka koMzimba
· Ukumelana neMichiza okugqwesileyo
· Ukucoceka okuphezulu okuphezulu
· Ukufumaneka kobume obuntsonkothileyo
· Isetyenziswa phantsi kwe-Oxidizing Atmosphere

Iinkcazelo Ngeempawu zeSiseko seMathiriyeli yeGraphite:

Uxinzelelo olubonakalayo:	1.85 g/cm3
Ukuxhathisa koMbane:	11 μΩm
Ukuqina kweFlexural:	49 MPa (500kgf/cm2)
Ukuqina konxweme:	58
Uthuthu:	<5ppm
I-Thermal Conductivity:	116 W/mK (100 kcal/mhr-℃)

I-SiC yokwaleka / i-MOCVD igqunywe Susceptor

Iimveliso ezingakumbi

I-SiC yokwaleka / i-MOCVD igqunywe Susceptor

Ulwazi lweNkampani

111

Izixhobo zoMzi-mveliso

222

Indawo yokugcina impahla

333

Iziqinisekiso

Iziqinisekiso22

iifaqs

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I-Q8:Kuthekani ngeemali zokuthumela ngenqanawa?
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