I-Quots ye-China ye-Graphite Ball Valves yoNyango loBubushushu

Inkcazelo emfutshane:


Iinkcukacha zeMveliso

Iithegi zeMveliso

Umsebenzi wethu uya kuba kukukhula ube ngumboneleli ovelisa izinto ezintsha zedijithali kunye nezixhobo zonxibelelwano ngokunika inzuzo eyongeziweyo, imveliso ekumgangatho wehlabathi, kunye nezakhono zokulungisa ii-Quots ze-China Graphite Ball Valves for Heat Treatment, Injongo yethu kukudala Win. -win imeko kunye nabathengi bethu.Sikholelwa ukuba siya kuba lolona khetho lwakho.“Udumo lokuqala, abaThengi abaphambili.“Ndilinde uphando lwakho.
Injongo yethu iya kuba kukukhula ube ngumboneleli ovelisa iteknoloji ephezulu yedijithali kunye nezixhobo zonxibelelwano ngokunikezela ngesitayile esongezelelweyo, imveliso ekumgangatho wehlabathi, kunye nokulungiswa kwezixhoboChina Graphite Crucible, Izimbiwa kunye neMathiriyeli, Sihlala sinamathela ekulandeleni ukunyaniseka, inzuzo efanayo, uphuhliso olufanayo, emva kweminyaka yophuhliso kunye nemigudu engadinwayo yabo bonke abasebenzi, ngoku sinenkqubo egqibeleleyo yokuthumela ngaphandle, izisombululo zezinto ezahlukeneyo, ukuhanjiswa kwabathengi ngokubanzi, ukuthuthwa kweenqwelo moya, ukucaciswa kwamazwe ngamazwe kunye neenkonzo zothutho. .Iqonga lokujonga indawo enye kubathengi bethu!

Ingcaciso yeMveliso

Iimbumba zekhabhoni / ikhabhoni(emva koku kubhekiselwa kuyo ngokuthi “C / C okanye CFC”) luhlobo lwezinto ezidibeneyo ezisekelwe kwikhabhoni kwaye zomelezwe yi-carbon fiber kunye neemveliso zayo (i-carbon fiber preform).Inayo zombini inertia yekhabhoni kunye namandla aphezulu e-carbon fiber.Ineempawu ezilungileyo zoomatshini, ukumelana nobushushu, ukuxhathisa ukugqwala, ukudambisa i-friction kunye ne-thermal kunye neempawu zombane.

CVD-SiCI-coating ineempawu zesakhiwo esifanayo, i-compact material, ukumelana nobushushu obuphezulu, ukumelana ne-oxidation, ukucoceka okuphezulu, ukuxhathisa kwe-asidi kunye ne-alkali kunye ne-reagent ye-organic, eneempawu ezizinzileyo zomzimba kunye neekhemikhali.

Xa kuthelekiswa nezinto ezicocekileyo zegraphite, i-graphite iqala i-oxidize kwi-400C, eya kubangela ukulahleka kwepowder ngenxa ye-oxidation, okubangelwa ukungcoliseka kwendalo kwizixhobo ze-peripheral kunye namagumbi okucoca, kunye nokwandisa ukungcola kokusingqongileyo okuphezulu.

Nangona kunjalo, ukugquma kwe-SiC kunokugcina uzinzo ngokwasemzimbeni kunye neekhemikhali kwii-degrees ze-1600, Isetyenziswa kakhulu kumashishini anamhlanje, ngakumbi kwishishini le-semiconductor.

Inkampani yethu ibonelela ngeenkonzo zenkqubo yokugquma kwe-SiC ngendlela ye-CVD kumphezulu wegraphite, iikeramics kunye nezinye izinto, ukwenzela ukuba iigesi ezikhethekileyo ezinekhabhoni kunye nesilicon zisabela kubushushu obuphezulu ukuze zifumane ubunyulu obuphezulu beamolekyuli zeSiC, iimolekyuli ezifakwe kumphezulu wezinto ezigqunyiweyo, ukwenza umaleko okhuselayo we-SIC.I-SIC eyenziwe idityaniswe ngokuqinileyo kwisiseko segraphite, inika isiseko segraphite iipropati ezikhethekileyo, ngaloo ndlela yenza umphezulu we-graphite compact, i-Porosity-free, ukumelana nobushushu obuphezulu, ukuxhathisa kwe-corrosion kunye nokumelana ne-oxidation.

 Ukusetyenzwa kwe-SiC yokwambathisa kumphezulu wegraphite MOCVD susceptors

Iimpawu eziphambili:

1. Ukumelana nobushushu obuphezulu be-oxidation:

Ukumelana ne-oxidation kusekuhle kakhulu xa ubushushu buphezulu ukuya kuma-1600 C.

2. Ukucoceka okuphezulu: okwenziwe nge-chemical vapour deposition phantsi kwemeko yokushisa kwe-chlorination ephezulu.

3. Ukumelana nokhukuliseko: ubunzima obuphezulu, indawo edibeneyo, iincinci ezincinci.

4. Ukumelana nokubola: i-asidi, i-alkali, ityuwa kunye nee-reagents eziphilayo.

 

IiNgcaciso eziPhambili ze-CVD-SIC yoMtyaliso:

SiC-CVD

Ukuxinana

(g/cc)

3.21

Amandla e-Flexural

(Mpa)

470

Ukwandiswa kweThermal

(10-6/K)

4

I-Thermal conductivity

(W/mK)

300

Imifanekiso eneenkcukacha

Ukusetyenzwa kwe-SiC yokwambathisa kumphezulu wegraphite MOCVD susceptorsUkusetyenzwa kwe-SiC yokwambathisa kumphezulu wegraphite MOCVD susceptorsUkusetyenzwa kwe-SiC yokwambathisa kumphezulu wegraphite MOCVD susceptorsUkusetyenzwa kwe-SiC yokwambathisa kumphezulu wegraphite MOCVD susceptorsUkusetyenzwa kwe-SiC yokwambathisa kumphezulu wegraphite MOCVD susceptors

Ulwazi lweNkampani

111

Izixhobo zoMzi-mveliso

222

Indawo yokugcina impahla

333

Iziqinisekiso

Iziqinisekiso22

 


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