Ixabiso elicatshulweyo leTshayina eliPhakamileyo loKuxhathisa iSilicon yeCarbide eAbrasive Powder Black Silicon Carbide Powder epholishayo

Ixabiso elicatshuliweyo leTshayina iTemperature Resistance Green yeSilicon Carbide Abrasive Powder Black Silicon Carbide Powder Polishing Powder obonakalayo

Inkcazelo emfutshane:

Indawo yemvelaphi:eTshayina

Ulwakhiwo lweCrystal:FCCβphase

Ubuninzi:3.21 g/cm;

Ukuqina:2500 Vickers;

Ubungakanani benkozo:2~10μm;

Ukucoceka kwemichiza:99.99995%;

Umthamo wobushushu:640J·kg-1·K-1;

Iqondo lobushushu eliphantsi:2700℃;

Amandla eFelexural:415 Mpa (RT 4-Point);

Imodyuli eNtsha:430 Gpa (4pt bend, 1300℃);

Ukwandiswa kweThermal (CTE):4.5 10-6K-1;

I-Thermal conductivity:300 (W/mK);

Thumela i-imeyile kuthi Khuphela njengePDF

Iinkcukacha zeMveliso

Iithegi zeMveliso

Sineqela lethu lokuthengisa, iqela loyilo, iqela lobugcisa, iqela le-QC kunye neqela lephakheji. Sineenkqubo ezingqongqo zokulawula umgangatho wenkqubo nganye. Kwakhona, bonke abasebenzi bethu banamava kwintsimi yoshicilelo ngexabiso elicatshulweyo leChina eliPhezulu loBubushushu obuMela ukuHlaza iSilicon Carbide Abrasive Powder Black Silicon Carbide Powder yokupholisha, inzuzo yabaThengi kunye nokwaneliseka ngokuqhelekileyo yeyona njongo yethu inkulu. Khumbula ukunxibelelana nathi. Sinike ithuba, sikubonelele ngokumangalisayo.
Sineqela lethu lokuthengisa, iqela loyilo, iqela lobugcisa, iqela le-QC kunye neqela lephakheji. Sineenkqubo ezingqongqo zokulawula umgangatho wenkqubo nganye. Kwakhona, bonke abasebenzi bethu banamava kwintsimi yokushicilelaChina Silicon Carbide, Sic, Yintoni ixabiso elihle? Sinika abathengi ngexabiso lasefektri. Kwisiseko somgangatho olungileyo, ukusebenza kakuhle kufuneka kuthathelwe ingqalelo kwaye kugcinwe iingeniso ezifanelekileyo eziphantsi nezisempilweni. Yintoni ukuhanjiswa okukhawulezayo? Senza ukuhanjiswa ngokweemfuno zabathengi. Nangona ixesha lokuhambisa lixhomekeke kubungakanani bomyalelo kunye nobunzima balo, sisazama ukubonelela ngeemveliso kunye nezisombululo ngexesha. Ngethemba elinyanisekileyo sinokuba nobudlelwane beshishini bexesha elide.
Ingcaciso yeMveliso

Inkampani yethu ibonelela ngeenkonzo zenkqubo yokugquma kwe-SiC ngendlela ye-CVD kumphezulu wegraphite, iikeramics kunye nezinye izinto, ukwenzela ukuba iigesi ezikhethekileyo ezinekhabhoni kunye nesilicon zisabela kubushushu obuphezulu ukuze zifumane ubunyulu obuphezulu beamolekyuli zeSiC, iimolekyuli ezifakwe kumphezulu wezinto ezigqunyiweyo, ukwenza umaleko okhuselayo we-SIC.

Iimpawu eziphambili:

1. Ukumelana nobushushu obuphezulu be-oxidation: ukuxhathisa kwe-oxidation kusekuhle kakhulu xa ubushushu buphezulu njenge-1600 C.

2. Ukucoceka okuphezulu : yenziwe yi-chemical vapor deposition phantsi kwemeko yokushisa kwe-chlorination ephezulu.

3. Ukumelana nokhukuliseko: ubunzima obuphezulu, indawo edibeneyo, iincinci ezincinci.

4. Ukumelana nokubola: i-asidi, i-alkali, ityuwa kunye ne-organic reagents.

IiNgcaciso eziphambili ze-CVD-SIC Coating

Iipropati zeSiC-CVD
Ulwakhiwo lweCrystal	iFCC β isigaba
Ukuxinana	g/cm ³	3.21
Ukuqina	Vickers ubulukhuni	2500
Ubungakanani benkozo	μm	2~10
Ucoceko lweMichiza	%	99.99995
Ubushushu Umthamo	J·kg-1 ·K-1	640
Iqondo lobushushu elisezantsi	℃	2700
Amandla eFelexural	MPa (RT 4-point)	415
Imodulus eselula	I-Gpa (4pt bend, 1300℃)	430
Ukwandiswa kweThermal (CTE)	10-6K-1	4.5
I-Thermal conductivity	(W/mK)	300