Eyona njongo yethu iphambili kukubonelela abathengi bethu ngobudlelwane boshishino olunzulu nolunoxanduva, ukunika ingqalelo yobuqu kubo bonke kuHlolo loMgangatho we-China Hot Ukuthengiswa koMgangatho oPhakamileyo weMetal yokunyibilikisa iGraphite Ingot Mould, Samkela ngokufudumeleyo abahlobo abasondeleyo abavela kuzo zonke iinkalo zobomi bemihla ngemihla ukuba funani intsebenziswano kunye nokwakha ingomso eligqwesileyo neliqaqambileyo.
Eyona njongo yethu iphambili kukubonelela abathengi bethu ngobudlelwane obunzulu noboxanduva loshishino, sibonelela ngengqwalaselo yobuqu kubo bonkeChina Continuous Casting Graphite Jig, Round Coating Graphite Mold, Siyalamkela ithuba lokwenza ishishini nawe kwaye sinethemba lokonwaba ekuncamatheleni iinkcukacha ezithe vetshe ngeemveliso kunye nezisombululo zethu. Umgangatho ogqwesileyo, ixabiso elikhuphisanayo, unikezelo ngexesha kunye nenkonzo ethembekileyo inokuqinisekiswa. Ngemibuzo engaphezulu nceda ungathandabuzi ukuqhagamshelana nathi.
Iimbumba zekhabhoni / ikhabhoni(emva koku kubhekiselwa kuyo ngokuthi "C / C okanye CFC”) luhlobo lwezinto ezidibeneyo ezisekelwe kwikhabhoni kwaye zomelezwe yi-carbon fiber kunye neemveliso zayo (i-carbon fiber preform). Inayo zombini inertia yekhabhoni kunye namandla aphezulu e-carbon fiber. Ineempawu ezilungileyo zoomatshini, ukumelana nobushushu, ukuxhathisa ukugqwala, ukudambisa i-friction kunye ne-thermal kunye neempawu zombane.
CVD-SiCI-coating ineempawu zesakhiwo esifanayo, i-compact material, ukumelana nobushushu obuphezulu, ukumelana ne-oxidation, ukucoceka okuphezulu, ukuxhathisa kwe-asidi kunye ne-alkali kunye ne-reagent ye-organic, eneempawu ezizinzileyo zomzimba kunye neekhemikhali.
Xa kuthelekiswa nezinto ezicocekileyo zegraphite, i-graphite iqala i-oxidize kwi-400C, eya kubangela ukulahleka kwepowder ngenxa ye-oxidation, okubangelwa ukungcoliseka kwendalo kwizixhobo ze-peripheral kunye namagumbi okucoca, kunye nokwandisa ukungcola kokusingqongileyo okuphezulu.
Nangona kunjalo, ukugquma kwe-SiC kunokugcina uzinzo ngokwasemzimbeni kunye neekhemikhali kwii-degrees ze-1600, Isetyenziswa kakhulu kumashishini anamhlanje, ngakumbi kwishishini le-semiconductor.
Inkampani yethu ibonelela ngeenkonzo zenkqubo yokugquma kwe-SiC ngendlela ye-CVD kumphezulu wegraphite, iikeramics kunye nezinye izinto, ukwenzela ukuba iigesi ezikhethekileyo ezinekhabhoni kunye nesilicon zisabela kubushushu obuphezulu ukuze zifumane ubunyulu obuphezulu beamolekyuli zeSiC, iimolekyuli ezifakwe kumphezulu wezinto ezigqunyiweyo, ukwenza umaleko okhuselayo we-SIC. I-SIC eyenziwe idityaniswe ngokuqinileyo kwisiseko segraphite, inika isiseko segraphite iipropati ezikhethekileyo, ngaloo ndlela yenza umphezulu we-graphite compact, i-Porosity-free, ukumelana nobushushu obuphezulu, ukuxhathisa kwe-corrosion kunye nokumelana ne-oxidation.
Iimpawu eziphambili:
1. Ukumelana nobushushu obuphezulu be-oxidation:
Ukumelana ne-oxidation kusekuhle kakhulu xa ubushushu buphezulu ukuya kuma-1600 C.
2. Ukucoceka okuphezulu: okwenziwe nge-chemical vapour deposition phantsi kwemeko yokushisa kwe-chlorination ephezulu.
3. Ukumelana nokhukuliseko: ubunzima obuphezulu, indawo edibeneyo, iincinci ezincinci.
4. Ukumelana nokubola: i-asidi, i-alkali, ityuwa kunye nee-reagents eziphilayo.
IiNgcaciso eziPhambili ze-CVD-SIC yoMtyaliso:
| SiC-CVD | ||
| Ukuxinana | (g/cc)
| 3.21 |
| Amandla e-Flexural | (Mpa)
| 470 |
| Ukwandiswa kweThermal | (10-6/K) | 4
|
| I-Thermal conductivity | (W/mK) | 300
|
