Amava olawulo lweeprojekthi ezityebileyo ngendlela engakholelekiyo kunye nomntu kwimodeli yenkonzo e-1 yenza ukubaluleka okukhulu konxibelelwano lwentlangano kunye nokuqonda kwethu ngokulula oko ukulindeleyo kwi-China yobuchwephesha yase China Sic Boat Carry Silicon Wafers into the High Temperature Diffusion Coating Coating Furnace Tube, Eyona njongo yethu isoloko ihleli. ukuchongwa njengophawu oluphezulu kunye nokukhokela njengovulindlela kwintsimi yethu. Siqinisekile ukuba amava ethu anemveliso ekudalweni kwezixhobo aya kufumana ukuthenjwa ngumthengi, Ndinqwenela ukusebenzisana kunye nokwenza ngokubambisana ixesha elide elingcono nawe!
Amava olawulo lweeprojekthi ezityebileyo ngendlela emangalisayo kunye nomntu kwimodeli yenkonzo e-1 yenza ukubaluleka konxibelelwano lombutho kunye nokuqonda kwethu lula ulindelo lwakho.ETshayina Phatha ii-Silicon Wafers, I-Polycrystallie Silicon Wafer, Wamkele nayiphi na imibuzo yakho kunye neenkxalabo malunga neemveliso zethu. Sijonge phambili ekusekeni ubudlelwane beshishini bexesha elide kunye nawe kwixa elizayo. Qhagamshelana nathi namhlanje. Singamahlakani eshishini lokuqala ukuhambelana neemfuno zakho!
ImvelisoDumbhalo
I-Silicon carbide Wafer Boat isetyenziswa ngokubanzi njengesibambi se-wafer kwinkqubo yokusasazwa kobushushu obuphezulu.
Izinto eziluncedo:
Ukumelana nobushushu obuphezulu:ukusetyenziswa okuqhelekileyo kwi-1800 ℃
I-conductivity ephezulu ye-thermal:ilingana nezinto zegraphite
Ukuqina okuphezulu:ukuqina okwesibini kuphela kwidayimane, i-boron nitride
Ukumelana nokubola:iasidi eyomeleleyo kunye ne-alkali ayinamhlwa kuyo, ukuxhathisa ukubola kungcono kune-tungsten carbide kunye ne-alumina.
Ubunzima obulula:ukuxinana okuphantsi, kufutshane ne-aluminiyam
Akukho deformation: i-coefficient ephantsi yokwandiswa kwe-thermal
Ukuxhathisa ukothuka kwe-thermal:inokumelana nokutshintsha kobushushu obubukhali, ukuxhathisa ukothuka kwe-thermal, kwaye inokusebenza okuzinzile
IiPropati zoBume beSiC
Ipropati | Ixabiso | Indlela |
Ukuxinana | 3.21 g/cc | I-Sink-float kunye ne-dimension |
Ubushushu obuthile | 0.66 J/g °K | I-Pulsed laser flash |
Amandla e-Flexural | 450 MPa560 MPa | I-4 point bend, i-RT4 point bend, i-1300 ° |
Ukuqina kokwaphuka | 2.94 MPa m1/2 | I-Microindentation |
Ukuqina | 2800 | Vicker's, 500g umthwalo |
Elastic ModulusOlutsha's Modulus | 450 GPA430 GPA | 4 pt ukugoba, RT4 pt ukugoba, 1300 °C |
Ubungakanani beenkozo | 2 – 10 µm | I-SEM |
Iipropati zoThermal zeSiC
I-Thermal Conductivity | 250 W/m °K | Indlela yeLaser flash, RT |
Ukwandiswa kweThermal (CTE) | 4.5 x 10-6 °K | Ubushushu begumbi ukuya kuma-950 °C, i-silica dilatometer |