Sikwagxile ekwandiseni izinto zolawulo kunye nenkqubo ye-QC ukuze sikwazi ukugcina inzuzo entle ngaphakathi kweshishini elikhuphisana ngokuqatha kwi-OEM Supply China Aln Ain.IAluminium Nitride Ceramickunye ne-High Insulation, Ngoku sinezisombululo ezine eziphambili. Iimveliso zethu zezona zisebenzayo zithengiswa kungekuphela ngexesha lemarike yaseTshayina, kodwa zamkelwe ngexesha loshishino lwamazwe ngamazwe.
Sikwagxile ekwandiseni ulawulo lwezinto kunye nenkqubo ye-QC ukuze sikwazi ukugcina inzuzo entle ngaphakathi kweshishini elikhuphisana ngokuqatha.IAluminium Nitride Ceramic, China Aluminiyam Nitride, Iimveliso zethu zithunyelwa kwihlabathi liphela. Abathengi bethu bahlala benelisekile ngomgangatho wethu othembekileyo, iinkonzo ezijoliswe kubathengi kunye namaxabiso akhuphisanayo. Injongo yethu “kukuqhubeka sifumana ukuthembeka kwakho ngokunikela iinzame zethu ekuphuculeni rhoqo izinto kunye neenkonzo zethu ukuze siqinisekise ulwaneliseko lwabasebenzisi bethu bokugqibela, abathengi, abasebenzi, ababoneleli kunye noluntu lwehlabathi esisebenzisana nalo”.
Iimbumba zekhabhoni / ikhabhoni(emva koku kubhekiselwa kuyo ngokuthi "C / C okanye CFC”) luhlobo lwezinto ezidibeneyo ezisekelwe kwikhabhoni kwaye zomelezwe yi-carbon fiber kunye neemveliso zayo (i-carbon fiber preform). Inayo zombini inertia yekhabhoni kunye namandla aphezulu e-carbon fiber. Ineempawu ezilungileyo zoomatshini, ukumelana nobushushu, ukuxhathisa ukugqwala, ukudambisa i-friction kunye ne-thermal kunye neempawu zombane.
CVD-SiCI-coating ineempawu zesakhiwo esifanayo, i-compact material, ukumelana nobushushu obuphezulu, ukumelana ne-oxidation, ukucoceka okuphezulu, ukuxhathisa kwe-asidi kunye ne-alkali kunye ne-reagent ye-organic, eneempawu ezizinzileyo zomzimba kunye neekhemikhali.
Xa kuthelekiswa nezinto ezicocekileyo zegraphite, i-graphite iqala i-oxidize kwi-400C, eya kubangela ukulahleka kwepowder ngenxa ye-oxidation, okubangelwa ukungcoliseka kwendalo kwizixhobo ze-peripheral kunye namagumbi okucoca, kunye nokwandisa ukungcola kokusingqongileyo okuphezulu.
Nangona kunjalo, ukugquma kwe-SiC kunokugcina uzinzo ngokwasemzimbeni kunye neekhemikhali kwii-degrees ze-1600, Isetyenziswa kakhulu kumashishini anamhlanje, ngakumbi kwishishini le-semiconductor.
Inkampani yethu ibonelela ngeenkonzo zenkqubo yokugquma kwe-SiC ngendlela ye-CVD kumphezulu wegraphite, iikeramics kunye nezinye izinto, ukwenzela ukuba iigesi ezikhethekileyo ezinekhabhoni kunye nesilicon zisabela kubushushu obuphezulu ukuze zifumane ubunyulu obuphezulu beamolekyuli zeSiC, iimolekyuli ezifakwe kumphezulu wezinto ezigqunyiweyo, ukwenza umaleko okhuselayo we-SIC. I-SIC eyenziwe idityaniswe ngokuqinileyo kwisiseko segraphite, inika isiseko segraphite iipropati ezikhethekileyo, ngaloo ndlela yenza umphezulu we-graphite compact, i-Porosity-free, ukumelana nobushushu obuphezulu, ukuxhathisa kwe-corrosion kunye nokumelana ne-oxidation.
Iimpawu eziphambili:
1. Ukumelana nobushushu obuphezulu be-oxidation:
Ukumelana ne-oxidation kusekuhle kakhulu xa ubushushu buphezulu ukuya kuma-1600 C.
2. Ukucoceka okuphezulu: okwenziwe nge-chemical vapour deposition phantsi kwemeko yokushisa kwe-chlorination ephezulu.
3. Ukumelana nokhukuliseko: ubunzima obuphezulu, indawo edibeneyo, iincinci ezincinci.
4. Ukumelana nokubola: i-asidi, i-alkali, ityuwa kunye nee-reagents eziphilayo.
IiNgcaciso eziPhambili ze-CVD-SIC yoKwaleka:
SiC-CVD | ||
Ukuxinana | (g/cc)
| 3.21 |
Amandla e-Flexural | (Mpa)
| 470 |
Ukwandiswa kweThermal | (10-6/K) | 4
|
I-Thermal conductivity | (W/mK) | 300
|