Izinto zegraphite ezicocekileyo zibalulekileiinkqubo kwi-semiconductor, i-LED kunye noshishino lwelanga. Umnikelo wethu usuka kwizinto ezisetyenziswayo zegraphite kwiindawo ezishushu ezikhulayo zekristale (izifudumezi, i-crucible susceptors, i-insuceptors), ukuya kwizinto ezichanekileyo eziphezulu zegraphite zezixhobo zokucubungula i-wafer, ezifana ne-silicon carbide coated graphite susceptors ye-Epitaxy okanye i-MOCVD. Yilapho i-graphite yethu ekhethekileyo ingena khona: i-graphite ye-isostatic ibalulekile ekuveliseni i-compound semiconductor layers.Ezi ziveliswa "kwindawo eshushu" phantsi kobushushu obugqithisileyo ngexesha elibizwa ngokuba yi-epitaxy, okanye inkqubo ye-MOCVD. Isithwala esijikelezayo apho ii-wafers zigqunywe kwi-reactor, siquka i-silicon carbide-coated isostatic graphite. Kuphela le graphite ecocekileyo kakhulu, i-homogeneous ihlangabezana neemfuno eziphezulu kwinkqubo yokwaleka.
TUmgaqo osisiseko wokukhula kwe-epitaxial wafer yi-LED: kwi-substrate (ikakhulukazi isafire, i-SiC kunye ne-Si) ishushu kwiqondo lokushisa elifanelekileyo, i-gaseous material InGaAlP ihanjiswa kwi-substrate surface ngendlela elawulwayo ukuze kukhule ifilimu ethile ye-crystal eyodwa. Okwangoku, itekhnoloji yokukhula ye-LED epitaxial wafer ikakhulu ithatha i-organic metal organic vapour deposition.
I-LED epitaxial substrate imathiriyelililitye lembombo lophuhliso lwetekhnoloji yoshishino lokukhanyisa lwe-semiconductor. Izinto ezahlukeneyo ze-substrate zifuna itekhnoloji yokukhulisa i-epitaxial wafer yahlukile ye-LED, itekhnoloji yokucubungula itshiphu kunye neteknoloji yokupakishwa kwesixhobo. Izinto ze-Substrate zinquma indlela yokuphuhlisa iteknoloji yokukhanyisa i-semiconductor.
Iimpawu zokukhethwa kwemathiriyeli ye-epitaxial wafer substrate ye-LED:
1. Izinto ze-epitaxial zinesakhiwo esifanayo okanye esifanayo se-crystal kunye ne-substrate, i-lattice encinci engahambisaniyo, i-crystallinity enhle kunye noxinzelelo oluphantsi.
2. Iimpawu ezintle ze-interface, ezihambelana ne-nucleation yezinto ze-epitaxial kunye nokubambelela okunamandla
3. Inozinzo oluhle lweekhemikhali kwaye akulula ukubola kunye nokubola kwiqondo lokushisa kunye nomoya wokukhula kwe-epitaxial
4. Ukusebenza kakuhle kwe-thermal, kubandakanywa ukuqhutyelwa kakuhle kwe-thermal kunye nokungahambi kakuhle kwe-thermal
5. Ukuqhuba kakuhle, kunokwenziwa kwisakhiwo esingaphezulu nasezantsi 6, ukusebenza kakuhle kwe-optical, kunye nokukhanya okukhutshwa sisixhobo esenziweyo kuncinci kutsalwa yi-substrate.
7. Iimpawu ezilungileyo zoomatshini kunye nokucutshungulwa lula kwezixhobo, kubandakanywa ukucolwa, ukupholisa kunye nokusika
8. Ixabiso eliphantsi.
9. Ubungakanani obukhulu. Ngokuqhelekileyo, ububanzi abuyi kuba ngaphantsi kwee-intshi ezi-2.
10. Kulula ukufumana i-substrate ye-shape eqhelekileyo (ngaphandle kokuba kukho ezinye iimfuno ezikhethekileyo), kunye ne-substrate shape efana ne-tray hole yezixhobo ze-epitaxial akulula ukwenza i-eddy current engaqhelekanga, ukwenzela ukuba ichaphazele umgangatho we-epitaxial.
11. Kwisiseko sokungachaphazeli umgangatho we-epitaxial, i-machinability ye-substrate iya kuhlangabezana neemfuno ze-chip elandelayo kunye nokupakishwa kokupakishwa ngokusemandleni.
Kunzima kakhulu ukukhethwa kwe-substrate ukuhlangabezana nemiba elishumi elinanye engentla ngexesha elinye. Ngoko ke, okwangoku, sinokuziqhelanisa kuphela ne-R & D kunye nokuveliswa kwezixhobo zokukhanyisa ukukhanya kwe-semiconductor kwii-substrates ezahlukeneyo ngokutshintsha iteknoloji yokukhula kwe-epitaxial kunye nokulungiswa kweteknoloji yokucubungula isixhobo. Zininzi izixhobo ze-substrate zophando lwe-gallium nitride, kodwa zimbini kuphela ii-substrates ezingasetyenziselwa imveliso, ezizezi, isafire Al2O3 kunye nesilicon carbide.Iinxalenye zeSiC.
Ixesha lokuposa: Feb-28-2022