Unikezelo olutsha lwe-2” 3” 4” 6” Intshi 6H Semi-insulating Silicon Carbide SiC Wafer Substrate

Inkcazelo emfutshane:

Indawo yemvelaphi:E-Zhejiang, eTshayina (eMaphandleni)

Inombolo yoMfanekiso:Inombolo yoMfanekiso:

Ukuqulunqwa kwemichiza:I-SiC eqatywe igraphite

Amandla e-Flexural:470Mpa

I-Thermal conductivity:300 W/mK

Umgangatho:Igqibelele

Umsebenzi:CVD-SiC

Isicelo:Semiconductor / Photovoltaic

Ubuninzi:3.21 g/cc

Ukwandiswa kweThermal:4 10-6/K

Uthuthu: <5ppm

Isampulu:Iyafumaneka

Ikhowudi yeHS:6903100000

Thumela i-imeyile kuthi Khuphela njengePDF

Iinkcukacha zeMveliso

Iithegi zeMveliso

Sinale motto engqondweni, ngoku sikhule sibe ngomnye wabona benzi bobuchule bokuvelisa izinto ezintsha, obunexabiso eliphantsi, kunye namaxabiso akhuphisanayo kunikezelo olutsha lwe-2” 3” 4” 6” Inch 6H Semi-insulating Silicon Carbide SiC. I-Wafer Substrate, Ukuba yinkampani encinci ephuhlayo, sisenokungabi yeyona nto iluncedo, kodwa besizama elona qabane lethu lilungileyo.
Sinale motto engqondweni, ngoku sikhule sibe ngomnye wabona benzi bobuchule bokuvelisa izinto ezintsha, obunexabiso eliphezulu, kunye namaxabiso akhuphisanayo, Silwela ukugqwesa, uphuculo oluthe gqolo kunye nokuveliswa kwezinto ezintsha, sizimisele ukusenza “abathengi. trust” kunye “nokhetho lokuqala loomatshini bobunjineli bezincedisi brand” ababoneleli. Khetha thina, ukwabelana nge-win-win situation!

Ukufakwa kwe-SiC ye-Graphite substrate yezicelo ze-Semiconductor ivelisa inxalenye enobunyulu obuphezulu kunye nokumelana nomoya we-oxidizing. I-CVD SiC okanye i-CVI SiC isetyenziswa kwiGraphite yeendawo ezilula okanye ezintsonkothileyo zoyilo. Ukugquma kungasetyenziswa kubunzima obuhlukeneyo kunye namalungu amakhulu kakhulu.

I-SiC yokwambathisa / ifakwe i-MOCVD Susceptor

Iimpawu: · Okugqwesileyo kweThermal Shock Resistance · Okugqwesileyo koKuxhathisa ukothuka koMzimba · Ukumelana neMichiza okugqwesileyo · Ucoceko oluPhezulu oluPhezulu · Ukufumaneka kobume obuntsonkothileyo · Isebenziseka phantsi kwe-Oxidizing Atmosphere

Iinkcazelo Ngeempawu zeSiseko seMathiriyeli yeGrafite:

Uxinzelelo olubonakalayo:	1.85 g/cm3
Ukuxhathisa koMbane:	11 μΩm
Ukuqina kweFlexural:	49 MPa (500kgf/cm2)
Ukuqina konxweme:	58
Uthuthu:	<5ppm
I-Thermal Conductivity:	116 W/mK (100 kcal/mhr-℃)

I-SiC yokwambathisa / ifakwe i-MOCVD Susceptor

Iimveliso ezingakumbi

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