I-MOCVD Substrate heater, i-Heating Elements ye-MOCVD

MOCVD Substrate heater, Elements Ukufudumeza For MOCVD Umfanekiso Featured

Inkcazelo emfutshane:

Imichiza yeGrafite

Inzuzo:Ukumelana nobushushu obuphezulu

Isicelo:MOCVD/Vacuum furnace/Hot Zone

Ubuninzi bobuninzi: 1.68-1.91g / cm3

Amandla e-Flexural: 30-46Mpa

Ukuxhathisa: 7-12μΩm

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Iinkcukacha zeMveliso

Iithegi zeMveliso

MOCVD Substrate heater, Izinto zokufudumeza ze-MOCVD,
isifudumezi segraphite, I-Graphite Semiconductor, isifudumezi, MOCVD Substrate heater,

I-MOCVD Substrate heater, i-Heating Elements ye-MOCVD

Igraphiteisifudumezi:
Iisifudumezi segraphiteAmacandelo asetyenziswa kwiziko lobushushu obuphezulu kunye nobushushu obufike kwi-2200 degree kwindawo ye-vacuum kunye ne-3000 degree kwindawo ye-deoxidized kunye ne-gas efakwe.
Iimpawu eziphambili zegraphiteisifudumezi:
1. ukufana kwesakhiwo sokufudumala.
2. Ukuqhuba kakuhle kombane kunye nomthwalo ophezulu wombane.
3. ukumelana nomhlwa.
4. i-inoxidizability.
5. ukucoceka kweekhemikhali eziphezulu.
6. amandla aphezulu oomatshini.
Inzuzo inamandla okusebenza, ixabiso eliphezulu kunye nokugcinwa okuphantsi.
Sinokuvelisa i-anti-oxidation kunye nobomi obude be-graphite crucible, i-graphite mold kunye nazo zonke iindawo zesifudumezi segraphite.
Iiparamitha eziphambili zesifudumezi segraphite:

Inkcazo yobuGcisa	IVET-M3
Ubuninzi Bobuninzi (g/cm3)	≥1.85
Umxholo wothuthu (PPM)	≤500
Ukuqina konxweme	≥45
Ukuchasa okuKhethekileyo (μ.Ω.m)	≤12
Amandla e-Flexural (Mpa)	≥40
Amandla acinezelayo (Mpa)	≥70
Max. Ubungakanani bozinkozo (μm)	≤43
I-Coefficient yoKwandiswa kweThermal Mm/°C	≤4.4 * 10-6

Isifudumezi seGraphite kwiziko lombane sineempawu zokumelana nobushushu, ukumelana ne-oxidation, ukuhanjiswa kombane okuhle kunye nokuqina komatshini. Sinomatshini weentlobo ezahlukeneyo zeheater yegraphite ngokoyilo lwabathengi.