Ixabiso eliphantsi eTshayina iGraphite Mold yeGrafite Iimveliso zeGrafite Machining iGrafite Isikhitshane seGrafite iiBlinds zeGrafite Shades iiShutter zeGraphite Roller Crucible, Block Boat

Inkcazelo emfutshane:


Iinkcukacha zeMveliso

Iithegi zeMveliso

Ngokuqhelekileyo sinamathela kwithiyori ethi "Umgangatho wokuqala, iPrestige Supreme".Sizibophelele ngokupheleleyo ekunikeni abathengi bethu izisombululo ezikumgangatho ophezulu okhuphisanayo, unikezelo olukhawulezileyo kunye neenkonzo zeengcaphephe ngeXabiso eliPhantsi eTshayina.IgraphiteIimveliso zeGrafite zokuMbumba zeGraphite zokuSebenza iGraphite Isikhephe seGraphite iiBlinds zeGrafite Shadi zeGraphite Shutters zeGraphite Roller Crucible, iBlock Boat, Asineli nje ukuhambisa umgangatho ophezulu kubathengi bethu, kodwa okubaluleke kakhulu ngakumbi ngumboneleli wethu omkhulu kunye nexabiso lokuthengisa elinobundlongondlongo.
Ngokuqhelekileyo sinamathela kwithiyori ethi "Umgangatho wokuqala, iPrestige Supreme".Sizibophelele ngokupheleleyo ekunikeni abathengi bethu izisombululo ezikumgangatho ophezulu okhuphisanayo, unikezelo olukhawulezileyo kunye neenkonzo zeengcaphephe kubathengi bethu.China Iimveliso zeGraphite, Igraphite, Ngokumalunga nomgangatho njengokusinda, iwonga njengesiqinisekiso, ukuveliswa kwezinto ezintsha njengamandla ashukumisayo, uphuhliso kunye nobuchwepheshe obuphambili, iqela lethu linethemba lokwenza inkqubela kunye nawe kwaye lenze imizamo engadinwayo yekamva eliqaqambileyo leli shishini.

Ingcaciso yeMveliso

Iimbumba zekhabhoni / ikhabhoni(emva koku kubhekiselwa kuyo ngokuthi “C / C okanye CFC”) luhlobo lwezinto ezidibeneyo ezisekelwe kwikhabhoni kwaye zomelezwe yi-carbon fiber kunye neemveliso zayo (i-carbon fiber preform).Inayo zombini inertia yekhabhoni kunye namandla aphezulu e-carbon fiber.Ineempawu ezilungileyo zoomatshini, ukumelana nobushushu, ukuxhathisa ukugqwala, ukudambisa i-friction kunye ne-thermal kunye neempawu zombane.

CVD-SiCI-coating ineempawu zesakhiwo esifanayo, i-compact material, ukumelana nobushushu obuphezulu, ukumelana ne-oxidation, ukucoceka okuphezulu, ukuxhathisa kwe-asidi kunye ne-alkali kunye ne-reagent ye-organic, eneempawu ezizinzileyo zomzimba kunye neekhemikhali.

Xa kuthelekiswa nezinto ezicocekileyo zegraphite, i-graphite iqala i-oxidize kwi-400C, eya kubangela ukulahleka kwepowder ngenxa ye-oxidation, okubangelwa ukungcoliseka kwendalo kwizixhobo ze-peripheral kunye namagumbi okucoca, kunye nokwandisa ukungcola kokusingqongileyo okuphezulu.

Nangona kunjalo, ukugquma kwe-SiC kunokugcina uzinzo ngokwasemzimbeni kunye neekhemikhali kwii-degrees ze-1600, Isetyenziswa kakhulu kumashishini anamhlanje, ngakumbi kwishishini le-semiconductor.

Inkampani yethu ibonelela ngeenkonzo zenkqubo yokugquma kwe-SiC ngendlela ye-CVD kumphezulu wegraphite, iikeramics kunye nezinye izinto, ukwenzela ukuba iigesi ezikhethekileyo ezinekhabhoni kunye nesilicon zisabela kubushushu obuphezulu ukuze zifumane ubunyulu obuphezulu beamolekyuli zeSiC, iimolekyuli ezifakwe kumphezulu wezinto ezigqunyiweyo, ukwenza umaleko okhuselayo we-SIC.I-SIC eyenziwe idityaniswe ngokuqinileyo kwisiseko segraphite, inika isiseko segraphite iipropati ezikhethekileyo, ngaloo ndlela yenza umphezulu we-graphite compact, i-Porosity-free, ukumelana nobushushu obuphezulu, ukuxhathisa kwe-corrosion kunye nokumelana ne-oxidation.

 Ukusetyenzwa kwe-SiC yokwambathisa kumphezulu wegraphite MOCVD susceptors

Iimpawu eziphambili:

1. Ukumelana nobushushu obuphezulu be-oxidation:

Ukumelana ne-oxidation kusekuhle kakhulu xa ubushushu buphezulu ukuya kuma-1600 C.

2. Ukucoceka okuphezulu: okwenziwe nge-chemical vapour deposition phantsi kwemeko yokushisa kwe-chlorination ephezulu.

3. Ukumelana nokhukuliseko: ubunzima obuphezulu, indawo edibeneyo, iincinci ezincinci.

4. Ukumelana nokubola: i-asidi, i-alkali, ityuwa kunye nee-reagents eziphilayo.

 

IiNgcaciso eziPhambili ze-CVD-SIC yoMtyaliso:

SiC-CVD

Ukuxinana

(g/cc)

3.21

Amandla e-Flexural

(Mpa)

470

Ukwandiswa kweThermal

(10-6/K)

4

I-Thermal conductivity

(W/mK)

300

Imifanekiso eneenkcukacha

Ukusetyenzwa kwe-SiC yokwambathisa kumphezulu wegraphite MOCVD susceptorsUkusetyenzwa kwe-SiC yokwambathisa kumphezulu wegraphite MOCVD susceptorsUkusetyenzwa kwe-SiC yokwambathisa kumphezulu wegraphite MOCVD susceptorsUkusetyenzwa kwe-SiC yokwambathisa kumphezulu wegraphite MOCVD susceptorsUkusetyenzwa kwe-SiC yokwambathisa kumphezulu wegraphite MOCVD susceptors

Ulwazi lweNkampani

111

Izixhobo zoMzi-mveliso

222

Indawo yokugcina impahla

333

Iziqinisekiso

Iziqinisekiso22

 


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