Inkampani yethu ijolise ekusebenzeni ngokuthembekileyo, ukukhonza bonke abathengi bethu, nokusebenza kwitekhnoloji entsha kunye nomatshini omtsha rhoqo ukuthengiswa okushushu, iChina Mirror Polish Silicon Carbide Nitride Ceramic Rod Si3n4 Ceramic Tube, Ngaba usafuna imveliso ekumgangatho ophezulu ekuyo Ngokuhambelana nomfanekiso wakho weshishini ngelixa usandisa imveliso yakho okanye uluhlu lwenkonzo? Zama izisombululo zethu ezikumgangatho ophezulu. Ukukhetha kwakho kuya kungqina ukuba unengqondo!
Inkampani yethu ijolise ekusebenzeni ngokuthembekileyo, ukukhonza bonke abathengi bethu, kunye nokusebenza kwitekhnoloji entsha kunye nomatshini omtsha rhoqoChina Silicon Nitride, I-Si3n4 Rod, Siye sahlala sigxininisa ekuveleni kwezisombululo, sichithe iimali ezilungileyo kunye nabasebenzi ekuphuculeni iteknoloji, kwaye siququzelele ukuphuculwa kwemveliso, ukuhlangabezana neemfuno zamathemba avela kuwo onke amazwe kunye nemimandla.
ISintered Silicon Carbide Ceramic Bushing
I-silicon carbide engenaxinzelelo (SSIC)iveliswa kusetyenziswa umgubo we-SiC ocolekileyo kakhulu oqulethe izongezo ze-sintering. Icutshungulwa kusetyenziswa iindlela zokubumba eziqhelekileyo kwezinye iiseramics kwaye i-sintered kwi-2,000 ukuya kwi-2,200 ° C kwi-atmosphere ye-inert yegesi.Kwakunye neenguqulelo ezicokisekileyo, ezinobukhulu obuziinkozo <5 um, iinguqulelo ze-coarse-grained kunye nobukhulu beenkozo ukuya kwi-1.5. mm ziyafumaneka.
I-SSIC yohlulwa ngamandla aphezulu ahlala phantse ngokuthe rhoqo ukuya kumaqondo obushushu aphezulu kakhulu (malunga ne-1,600° C), egcina loo mandla ixesha elide!
Iinzuzo zemveliso:
Ukumelana ne-oxidation yobushushu obuphezulu
Uxhathiso olugqwesileyo lweCorrosion
Ukuxhathisa okulungileyo kweAbrasion
I-coefficient ephezulu yokushisa ukushisa
Ukuzithambisa, ukuxinana okuphantsi
Ukuqina okuphezulu
Uyilo olulungiselelweyo.
Iimpawu zobugcisa:
Izinto | Iyunithi | Idatha |
Ukuqina | HS | ≥110 |
Inqanaba le-Porosity | % | <0.3 |
Ukuxinana | g/cm3 | 3.10-3.15 |
Ukucinezela | MPa | >2200 |
Ukomelela Kweqhekeza | MPa | >350 |
I-Coefficient yokwandiswa | 10/°C | 4.0 |
Umxholo weSic | % | ≥99 |
I-Thermal conductivity | W/mk | >120 |
Imodyuli ye-elastic | GPA | ≥400 |
Ubushushu | °C | 1380 |