Izixhobo eziqhutywa kakuhle, abasebenzi bengeniso yeengcali, kunye neemveliso ezingcono kakhulu emva kokuthengisa kunye neenkonzo; Siye saba ngamaqabane amakhulu amanyeneyo kunye nabantwana, wonke umntu unamathela kwinzuzo yenkampani "umanyano, ukuzinikela, ukunyamezela" kuMgangatho oMhle weSilicon Carbide RBSIC/SISIC Cantilever Paddle esetyenziswa kwiSolar Photovoltaic Industry, Samkela ngokunyanisekileyo aba babini bangaphandle nabasekhaya. Amaqabane oshishino, kwaye ndiyathemba ukusebenza nawe kungekudala kwixesha elide!
Izixhobo eziqhutywa kakuhle, abasebenzi bengeniso yeengcali, kunye neemveliso ezingcono kakhulu emva kokuthengisa kunye neenkonzo; Siye saba ngamaqabane aphambili amanyeneyo kunye nabantwana, wonke umntu unamathela kwinzuzo yenkampani "umanyano, ukuzinikela, ukunyamezelana"China Refractory ceramic kunye kwikonti yeceramic, Ukuhlangabezana neemfuno zabathengi bomntu othile kwinkonzo nganye egqibeleleyo kunye nezinto ezisemgangathweni ezizinzileyo. Samkela ngokufudumeleyo abathengi kwihlabathi liphela ukuba basindwendwele, ngentsebenziswano yethu enamacala amaninzi, kwaye ngokudibeneyo siphuhlise iimarike ezintsha, senze ikamva eliqaqambileyo!
I-SiC yokwambathisa/igqunywe nge-Graphite substrate yeSemiconductor I-susceptors ibamba kwaye i-wafers ye-semiconductor yokufudumala ngexesha lokulungiswa kwe-thermal. Isixhasi senziwe ngesixhobo esifunxa amandla ngokufakwa, ukuqhutywa, kunye/okanye ngemitha kwaye sifudumeza iwafer. Ukuxhathisa ukothuka kwe-thermal, ukuhanjiswa kwe-thermal, kunye nokucoceka kubaluleke kakhulu ekusebenzeni ngokukhawuleza kwe-thermal (RTP). I-Silicon carbide coated graphite, i-silicon carbide (i-SiC), kunye ne-silicon (Si) isetyenziswa ngokuqhelekileyo kwi-susceptors ngokuxhomekeke kwindawo ethile ye-thermal kunye neekhemikhali. I-PureSiC® CVD SiC kunye ne-ClearCarbon™ i-ultra-pure imathiriyeli ehambisa uzinzo oluphezulu lwe-thermal, ukuxhathisa ukubola, kunye nokuqina. Ingcaciso yeMveliso
Ukufakwa kwe-SiC ye-Graphite substrate yezicelo ze-Semiconductor ivelisa inxalenye enobunyulu obuphezulu kunye nokumelana nomoya we-oxidizing.
I-CVD SiC okanye i-CVI SiC isetyenziswa kwiGraphite yeendawo ezilula okanye ezintsonkothileyo zoyilo. Ukugquma kungasetyenziswa kubunzima obuhlukeneyo kunye namalungu amakhulu kakhulu.
Iikeramics zobuchwephesha zikhethwa ngokwendalo kwizicelo ze-semiconductor thermal processing ezibandakanya i-RTP (i-Rapid Thermal Processing), i-Epi (i-Epitaxial), i-diffusion, i-oxidation, kunye ne-annealing. I-CoorsTek ibonelela ngezinto eziphambili zemathiriyeli eyilelwe ngokuthe ngqo ukumelana nezothuso ezinobushushu obuphezulu, obuqinileyo, obuphindaphindwayo kubushushu obuphezulu.
Iimbonakalo:
· Okugqwesileyo kweThermal Shock Resistance
· Okugqwesileyo koKuxhathisa ukothuka koMzimba
· Ukumelana neMichiza okugqwesileyo
· Ukucoceka okuphezulu okuphezulu
· Ukufumaneka kobume obuntsonkothileyo
· Isetyenziswa phantsi kwe-Oxidizing Atmosphere
isicelo:
Iwafer kufuneka idlule kumanyathelo amaninzi ngaphambi kokuba ilungele ukusetyenziswa kwizixhobo zombane. Enye inkqubo ebalulekileyo yi-silicon epitaxy, apho ii-wafers ziqhutyelwa kwi-graphite susceptors. Iipropati kunye nomgangatho we-susceptors zinempembelelo ebalulekileyo kumgangatho we-wafer's epitaxial layer.
Iinkcazelo Ngeempawu zeSiseko seMathiriyeli yeGrafite:
Uxinzelelo olubonakalayo: | 1.85 g/cm3 |
Ukuxhathisa koMbane: | 11 μΩm |
Ukuqina kweFlexural: | 49 MPa (500kgf/cm2) |
Ukuqina konxweme: | 58 |
Uthuthu: | <5ppm |
I-Thermal Conductivity: | 116 W/mK (100 kcal/mhr-℃) |
Imveliso engakumbi