Ukonyusa rhoqo inkqubo yolawulo ngenxa yomgaqo wakho othi "onyanisekileyo, ukholo oluhle kunye nomgangatho zisisiseko sophuhliso lweshishini", sithatha kakhulu isiseko sezisombululo ezinxulumene namazwe ngamazwe, kwaye ngokuqhubekayo sidala izisombululo ezitsha zokwanelisa iimfuno zabathengi beFactory. Iivenkile eTshayina 1200c yePlasma eyomeleziweyo yokuBekwa komphunga weMichizaPecvdI-Vacuum Funace, Kunye nenjongo engunaphakade “yokuphuculwa komgangatho ophezulu oqhubekayo, ukwaneliseka kwabathengi”, siqinisekile ukuba iimveliso zethu ezikumgangatho ophezulu zizinzile kwaye zithembekile kwaye izisombululo zethu zithengiswa kakhulu ekhaya naphesheya kweelwandle.
Ukonyusa rhoqo inkqubo yolawulo ngenxa yomgaqo wakho othi "onyanisekileyo, ukholo oluhle kunye nomgangatho zisisiseko sophuhliso lweshishini", sithatha kakhulu isiseko sezisombululo ezinxulumene namazwe ngamazwe, kwaye ngokuqhubekayo sidala izisombululo ezitsha zokwanelisa iimfuno zabathengi.I-Plasma yaseTshayina eyoNgezelelweyo yokuBekwa koMphunga weMichiza, Pecvd, Umgaqo-nkqubo wethu weNkampani "ubunjani kuqala, ukuba ngcono nokomelela, uphuhliso oluzinzileyo" . Iinjongo zethu zosukelo "kuluntu, abathengi, abasebenzi, amahlakani kunye namashishini ukuba afune inzuzo efanelekileyo". Sinqwenela ukusebenzisana nabo bonke abavelisi beemoto ezahlukeneyo, ivenkile yokulungisa, intanga yemoto, emva koko sidale ikamva elihle! Enkosi ngokuthatha ixesha lokujonga iwebhusayithi yethu kwaye siyakwamkela naziphi na iingcebiso onokuthi ube nazo ezinokusinceda siphucule indawo yethu.

I-CVD-SiC yokwambathisa ineempawu zesakhiwo esifanayo, izinto ezihlangeneyo, ukumelana nobushushu obuphezulu, ukumelana ne-oxidation, ukucoceka okuphezulu, ukuxhathisa kwe-asidi kunye ne-alkali kunye ne-reagent ye-organic, eneempawu ezizinzileyo zomzimba kunye neekhemikhali.

Xa kuthelekiswa nezinto ezicocekileyo zegraphite, i-graphite iqala i-oxidize kwi-400C, eya kubangela ukulahleka kwepowder ngenxa ye-oxidation, okubangelwa ukungcoliseka kwendalo kwizixhobo ze-peripheral kunye namagumbi okucoca, kunye nokwandisa ukungcola kokusingqongileyo okuphezulu.

Nangona kunjalo, ukugquma kwe-SiC kunokugcina uzinzo ngokwasemzimbeni kunye neekhemikhali kwii-degrees ze-1600, Isetyenziswa kakhulu kumashishini anamhlanje, ngakumbi kwishishini le-semiconductor.

Inkampani yethu ibonelela ngeenkonzo zenkqubo yokugquma kwe-SiC ngendlela ye-CVD kumphezulu wegraphite, iikeramics kunye nezinye izinto, ukwenzela ukuba iigesi ezikhethekileyo ezinekhabhoni kunye nesilicon zisabela kubushushu obuphezulu ukuze zifumane ubunyulu obuphezulu beamolekyuli zeSiC, iimolekyuli ezifakwe kumphezulu wezinto ezigqunyiweyo, ukwenza umaleko okhuselayo we-SIC. I-SIC eyenziwe idityaniswe ngokuqinileyo kwisiseko segraphite, inika isiseko segraphite iipropati ezikhethekileyo, ngaloo ndlela yenza umphezulu we-graphite compact, i-Porosity-free, ukumelana nobushushu obuphezulu, ukuxhathisa kwe-corrosion kunye nokumelana ne-oxidation.

Iimpawu eziphambili:

1. Ukumelana nobushushu obuphezulu be-oxidation:

Ukumelana ne-oxidation kusekuhle kakhulu xa ubushushu buphezulu ukuya kuma-1600 C.

2. Ukucoceka okuphezulu: okwenziwe nge-chemical vapour deposition phantsi kwemeko yokushisa kwe-chlorination ephezulu.

3. Ukumelana nokhukuliseko: ubunzima obuphezulu, indawo edibeneyo, iincinci ezincinci.

4. Ukumelana nokubola: i-asidi, i-alkali, ityuwa kunye ne-organic reagents.

IiNgcaciso eziPhambili ze-CVD-SIC yoMtyaliso:

Ubunakho bokubonelela:

10000 Iqhekeza/Amaqhekeza ngenyanga
UkuPakisha kunye nokuhanjiswa:
Ukupakisha:Ukupakisha okuMgangatho & okuqinileyo
Ingxowa yePoly + Ibhokisi + Ikhathoni + Iphalethi
Izibuko:
Ningbo/Shenzhen/Shanghai
Ixesha lokukhokhela:

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