Ukusungula izinto ezintsha, umgangatho kunye nokuthembeka zizinto eziphambili zenkampani yethu. Le migaqo namhlanje kunanini na ngaphambili yenza isiseko sempumelelo yethu njengenkampani yamazwe ngamazwe ephakathi kumlinganiselo ophakathi kwixabiso eliphantsi le-China High Hardness Silicon Carbide (SiC) Grains, i-Silicon Carbie Powder, Injongo yethu kukunceda abathengi baqonde iinjongo zabo. Senza iinzame ezinkulu zokufezekisa le meko yokuphumelela kwaye samkele ngokunyanisekileyo ukuba usijoyine!
Ukusungula izinto ezintsha, umgangatho kunye nokuthembeka zizinto eziphambili zenkampani yethu. Le mithetho-siseko namhlanje kunanini na ngaphambili yenza isiseko sempumelelo yethu njengenkampani kumazwe ngamazwe ephakathi komlinganiselo weChina Silicon Carbide, Sic, Inkampani yethu isebenza ngomgaqo wokusebenza "wokusekwe kwintembeko, intsebenziswano edaliweyo, abantu abajolise kubo, baphumelele intsebenziswano". Sinethemba lokuba sinokuba nobudlelwane bobuhlobo kunye nosomashishini abavela kwihlabathi liphela.

I-CVD-SiC yokwambathisa ineempawu zesakhiwo esifanayo, izinto ezihlangeneyo, ukumelana nobushushu obuphezulu, ukumelana ne-oxidation, ukucoceka okuphezulu, ukuxhathisa kwe-asidi kunye ne-alkali kunye ne-reagent ye-organic, eneempawu ezizinzileyo zomzimba kunye neekhemikhali.

Xa kuthelekiswa nezinto ezicocekileyo zegraphite, i-graphite iqala i-oxidize kwi-400C, eya kubangela ukulahleka kwepowder ngenxa ye-oxidation, okubangelwa ukungcoliseka kwendalo kwizixhobo ze-peripheral kunye namagumbi okucoca, kunye nokwandisa ukungcola kokusingqongileyo okuphezulu.

Nangona kunjalo, ukugquma kwe-SiC kunokugcina uzinzo ngokwasemzimbeni kunye neekhemikhali kwii-degrees ze-1600, Isetyenziswa kakhulu kumashishini anamhlanje, ngakumbi kwishishini le-semiconductor.

Inkampani yethu ibonelela ngeenkonzo zenkqubo yokugquma kwe-SiC ngendlela ye-CVD kumphezulu wegraphite, iikeramics kunye nezinye izinto, ukwenzela ukuba iigesi ezikhethekileyo ezinekhabhoni kunye nesilicon zisabela kubushushu obuphezulu ukuze zifumane ubunyulu obuphezulu beamolekyuli zeSiC, iimolekyuli ezifakwe kumphezulu wezinto ezigqunyiweyo, ukwenza umaleko okhuselayo we-SIC. I-SIC eyenziwe idityaniswe ngokuqinileyo kwisiseko segraphite, inika isiseko segraphite iipropati ezikhethekileyo, ngaloo ndlela yenza umphezulu we-graphite compact, i-Porosity-free, ukumelana nobushushu obuphezulu, ukuxhathisa kwe-corrosion kunye nokumelana ne-oxidation.

Iimpawu eziphambili:

1. Ukumelana nobushushu obuphezulu be-oxidation:

Ukumelana ne-oxidation kusekuhle kakhulu xa ubushushu buphezulu ukuya kuma-1600 C.

2. Ukucoceka okuphezulu: okwenziwe nge-chemical vapour deposition phantsi kwemeko yokushisa kwe-chlorination ephezulu.

3. Ukumelana nokhukuliseko: ubunzima obuphezulu, indawo edibeneyo, iincinci ezincinci.

4. Ukumelana nokubola: i-asidi, i-alkali, ityuwa kunye nee-reagents eziphilayo.

IiNgcaciso eziPhambili ze-CVD-SIC yoMtyaliso:

Ubunakho bokubonelela:

10000 Iqhekeza/Amaqhekeza ngenyanga
UkuPakisha kunye nokuhanjiswa:
Ukupakisha:Ukupakisha okuMgangatho & okuqinileyo
Ingxowa yePoly + Ibhokisi + Ikhathoni + Iphalethi
Izibuko:
Ningbo/Shenzhen/Shanghai
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