Wholesale OEM/ODM GaN-Basedepitaxial on Sic Substrates 4′′

Short Description:

Wafer carriers used in epitaxial growth processing must endure high temperatures and harsh chemical cleaning. CoorsTek Clear Carbon™ susceptors are engineered specifically for these demanding epitaxy equipment applications. Their high-purity silicon carbide (SiC) coated graphite construction provides superior heat resistance, even thermal uniformity for consistent epi layer thickness and resistance, and durable chemical resistance. Fine SiC crystal coating provides a clean, smooth surface, critical for handling since pristine wafers contact the susceptor at many points across their entire area

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It is actually a good way to boost our products and solutions and repair. Our mission should be to produce imaginative products and solutions to clients using a fantastic working experience for Wholesale OEM/ODM GaN-Basedepitaxial on Sic Substrates 4′′, We focus on building own brand and in combination with numerous experienced expression and first-class equipment . Our goods you worth have.
It is actually a good way to boost our products and solutions and repair. Our mission should be to produce imaginative products and solutions to clients using a fantastic working experience for China GaN Substrates and GaN Film, With a wide range, good quality, reasonable prices and stylish designs, our merchandise are extensively used in beauty and other industries. Our products and solutions are widely recognized and trusted by users and can meet continuously changing economic and social needs.

SiC coating graphite MOCVD Wafer carriers

All of our susceptors are made of high-strength isostatic graphite. Benefit from the high purity of our graphites – developed especially for challenging processes like epitaxy, crystal growing, ion implantation and plasma etching, as well as for the production of LED chips.

Product Description
SiC coating of Graphite substrate for Semiconductor applications produces a part with superior purity and resistance to oxidizing atmosphere.
CVD SiC or CVI SiC is applied to Graphite of simple or complex design parts. Coating can be applied in varying thicknesses and to very large parts.

Compon

SiC coating graphite MOCVD Wafer carriers

Special advantages of our SiC-coated graphite susceptors include extremely high purity, homogenous coating and an excellent service life. They also have high chemical resistance and thermal stability properties.

We maintain very close tolerances when applying the SiC coating, using high-precision machining to ensure a uniform susceptor profile. We also produce materials with ideal electrical resistance properties for use in inductively heated systems. All finished components come with a purity and dimensional compliance certificate.

Application:

Features:
· Excellent Thermal Shock Resistance
· Excellent Physical Shock Resistance
· Excellent Chemical Resistance
· Super High Purity
· Availability in Complex Shape
· Usable under Oxidizing AtmosphereTypical Properties of Base Graphite Material:

Apparent Density:	1.85 g/cm3
Electrical Resistivity:	11 μΩm
Flexural Strenth:	49 MPa (500kgf/cm2)
Shore Hardness:	58
Ash:	<5ppm
Thermal Conductivity:	116 W/mK (100 kcal/mhr-℃)

It is actually a good way to boost our products and solutions and repair. Our mission should be to produce imaginative products and solutions to clients using a fantastic working experience for Wholesale OEM/ODM GaN-Basedepitaxial on Sic Substrates 4′′, We focus on building own brand and in combination with numerous experienced expression and first-class equipment . Our goods you worth have.
Wholesale OEM/ODM China GaN Substrates and GaN Film, With a wide range, good quality, reasonable prices and stylish designs, our merchandise are extensively used in beauty and other industries. Our products and solutions are widely recognized and trusted by users and can meet continuously changing economic and social needs.