When silicon carbide crystal grows, the “environment” of the growth interface between the axial center of the crystal and the edge is different, so that the crystal stress on the edge i...
Why the reaction rate of silicon and sodium hydroxide can surpass that of silicon dioxide can be analyzed from the following aspects:
Difference in chemical bond energy
▪ Reaction of silicon and so...
Triangular defect
Triangular defects are the most fatal morphological defects in SiC epitaxial layers. A large number of literature reports have shown that the formation of triangular defects is...
The “Graphite Electrode Market” research report added by LLC is a thorough analysis of the latest trends in the business. The report also distributes valuable statistics on market size,...
Silicon Carbide Graphite Mold
Silicon carbide graphite mold is a composite mold with silicon carbide (SiC) as the base and graphite as the reinforcement material. This mold has excellent ...
The global graphite crucible market report is compiled through in-depth analysis of the market dynamics in North America, Europe, South America, Asia Pacific, Middle East and Africa. According to t...