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Sintered Silicon Carbide Ceramic Bushing
Pressureless sintered silicon carbide (SSIC) is produced using very fine SiC powder containing sintering additives. It is processed using forming methods typical for other ceramics and sintered at 2,000 to 2,200° C in an inert gas atmosphere.As well as fine-grained versions, with grain sizes < 5 um, coarse-grained versions with grain sizes of up to 1.5 mm are available.
SSIC is distinguished by high strength that stays nearly constant up to very high temperatures (approximately 1,600° C), maintaining that strength over long periods!
Product advantages:
High temperature oxidation resistance
Excellent Corrosion resistance
Good Abrasion resistance
High coefficient of heat conductivity
Self-lubricity, low density
High hardness
Customized design.
Technical properties:
Items | Unit | Data |
Hardness | HS | ≥110 |
Porosity Rate | % | <0.3 |
Density | g/cm3 | 3.10-3.15 |
Compressive | MPa | >2200 |
Fractural Strength | MPa | >350 |
Coefficient of expansion | 10/°C | 4.0 |
Content of Sic | % | ≥99 |
Thermal conductivity | W/m.k | >120 |
Elastic Modulus | GPa | ≥400 |
Temperature | °C | 1380 |