SiC coating graphite MOCVD Wafer carriers, Graphite Susceptors bakeng saSiC Epitaxy,
Carbon e fana ka li-susceptors, Li-susceptors tsa graphite epitaxy, Li-substrates tse tšehetsang graphite, Motlatsi oa MOCVD, SiC Epitaxy, Li-Susceptors tsa Wafer,
Melemo e khethehileng ea li-susceptors tsa graphite tse koahetsoeng ka SiC li kenyelletsa bohloeki bo phahameng haholo, ho roala homogenous le bophelo bo botle ba ts'ebeletso. Li boetse li na le khanyetso e phahameng ea lik'hemik'hale le thepa ea botsitso ba mocheso.
SiC coating ea Graphite substrate bakeng sa lits'ebetso tsa Semiconductor e hlahisa karolo e nang le bohloeki bo phahameng le ho hanyetsa sepakapaka sa oxidizing.
CVD SiC kapa CVI SiC e sebelisoa ho Graphite ea likarolo tse bonolo kapa tse rarahaneng tsa moralo. Ho roala ho ka sebelisoa ka botenya bo sa tšoaneng le likarolong tse kholo haholo.
Likaroloana:
· Excellent Thermal Shock Resistance
· Ho Hanyetsa ho Tšoaroa ha 'Mele ho babatsehang
· Excellent Chemical Resistance
· Bohloeki bo Phahameng ka ho Fetisisa
· Ho fumaneha ka Sebopeho se Ratang
· E ka sebelisoa tlas'a Oxidizing Atmosphere
Kopo:
Maemo a Tloaelehileng a Base Graphite Material:
Tekano e Hlahang: | 1.85 g/cm3 |
Ho hanyetsa Motlakase: | 11 μΩm |
Flexural Strenth: | 49 MPa (500kgf/cm2) |
Bothata ba Lebōpo: | 58 |
Molora: | <5ppm |
Thermal Conductivity: | 116 W/mK (100 kcal/mhr-℃) |
Carbon e fana ka li-susceptorsle likarolo tsa graphite bakeng sa lisebelisoa tsohle tsa morao-rao tsa epitaxy. Potefolio ea rona e kenyelletsa li-barrel susceptors bakeng sa li-unit tse kentsoeng le tsa LPE, li-susceptors tsa pancake tsa LPE, CSD, le likarolo tsa Gemini, le li-susceptors tse nang le sephaephe se le seng bakeng sa likarolo tse sebelisitsoeng le tsa ASM. e fana ka moralo o nepahetseng bakeng sa ts'ebeliso ea hau.