MOCVD Susceptor Reka Inthaneteng China, Sic Graphite epitaxy susceptors

Tlhaloso e Khutšoanyane:

Sebaka sa Tšimoloho:Zhejiang, China (Bohareng)

Nomoro ea Mohlala:Boat3004

Sebopeho sa Lik'hemik'hale:SiC e koahetsoeng ka graphite

Flexural matla:470Mpa

Thermal conductivity:300 W/mK

Boleng:E phethahetseng

Mosebetsi:CVD-SiC

Kopo:Semiconductor /Photovoltaic

Tekano:3.21 g/cc

Katoloso ea mocheso:4 10-6/K

Molora: <5ppm

Mohlala:E fumaneha

Khoutu ea HS:6903100000

Re romelle lengolo-tsoibila Khoasolla e le PDF

Lintlha tsa Sehlahisoa

Li-tag tsa Sehlahisoa

MOCVD Susceptor Reka Inthaneteng China, Sic Graphiteli-susceptors tsa epitaxy,
Carbon e fana ka li-susceptors, EPITAXY LE MOCVD, li-susceptors tsa epitaxy, Li-Susceptors tsa Graphite, SiC Epitaxy,

CVD-SiC barbotage na le litšobotsi tsa sebopeho junifomo, thepa diseke ee, phahameng mocheso ho hanyetsa, k'habeche oxidation, bohloeki bo phahameng, ho hanyetsa acid & alkali le reagent organic, le thepa e tsitsitseng 'meleng le lik'hemik'hale.

Ha ho bapisoa le lisebelisoa tse phahameng tsa graphite, graphite e qala ho oxidize ho 400C, e tla baka tahlehelo ea phofo ka lebaka la oxidation, e leng se bakang tšilafalo ea tikoloho ho lisebelisoa tsa peripheral le likamore tsa vacuum, le ho eketsa litšila tsa tikoloho e hloekileng.

Leha ho le joalo, ho roala ha SiC ho ka boloka botsitso ba 'mele le lik'hemik'hale ka likhato tse 1600, E sebelisoa haholo indastering ea sejoale-joale, haholo indastering ea semiconductor.

Khamphani ea rona e fana ka lits'ebeletso tsa ts'ebetso ea ho roala SiC ka mokhoa oa CVD holim'a graphite, li-ceramics le lisebelisoa tse ling, e le hore likhase tse khethehileng tse nang le carbon le silicon li sebetsane le mocheso o phahameng ho fumana limolek'hule tsa SiC tse hloekileng, limolek'hule tse behiloeng holim'a thepa e koahetsoeng, ho etsa lera la tšireletso la SIC. SIC e entsoeng e tlamahane ka thata ho setsi sa graphite, e fana ka lisebelisoa tse khethehileng tsa graphite, kahoo e etsa hore bokaholimo ba graphite bo kopane, bo se ke ba e-ba le Porosity, ho hanyetsa mocheso o phahameng, ho hanyetsa kutu le ho hanyetsa oxidation.

Kopo:

Lintlha tse ka sehloohong:

1. Ho hanyetsa mocheso o phahameng oa oxidation:

khanyetso ea oxidation e ntse e le ntle haholo ha mocheso o le holimo ho 1700 C.

2. Bohloeki bo phahameng: bo entsoeng ka ho kenngoa ha mouoane oa lik'hemik'hale tlas'a boemo bo phahameng ba mocheso oa chlorination.

3. Ho hanyetsa khoholeho ea mobu: boima bo phahameng, bokaholimo bo kopanetsoeng, likaroloana tse ntle.

4. Ho hanyetsa kutu: acid, alkali, letsoai le li-reagents tse phelang.

Lintlha tse ka sehloohong tsa CVD-SIC Coatings:

SiC-CVD
Botenya	(g/cc)	3.21
Matla a flexural	(Mpa)	470
Katoloso ea mocheso	(10-6/K)	4
Thermal conductivity	(W/mK)	300

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