Fektheri ka kotloloho China Green Sic Silicon Carbide Powder JIS Standard

Tlhaloso e Khutšoanyane:


Lintlha tsa Sehlahisoa

Li-tag tsa Sehlahisoa

Thepa ea rona e tsejoa ka ho pharaletseng ebile e ka tšeptjoa ke basebelisi 'me e ka kopana le litlhoko tsa lichelete le tsa sechaba tsa Factory ka ho toba China Green.SicSilicon Carbide Powder JIS Standard, Ka hona, re ka kopana le lipotso tse fapaneng ho tsoa ho bareki ba fapaneng. Etsa bonnete ba hore u fumana leqephe la rona la marang-rang ho sheba lintlha tse ngata le lintlha tse tsoang lihlahisoa tsa rona.
Thepa ea rona e tsejoa ka ho pharaletseng ebile e ka tšeptjoa ke basebelisi 'me e ka kopana le litlhoko tsa lichelete le tsa sechaba ka linako tsohleChina Silicon Carbide, Sic, Khampani ea rona e lula e ikemiselitse ho finyella tlhoko ea hau ea boleng, lintlha tsa theko le sepheo sa thekiso. Rea u amohela ka mofuthu u bula meeli ea puisano. Ke thabo ea rona e kholo ho u sebeletsa haeba u tla hloka morekisi ea tšepahalang le tlhaiso-leseling ea boleng.

Tlhaloso ea Sehlahisoa

Lisebelisoa tsa carbon / carbon(eo ka mor'a moo e bitsoang "C / C kapa CFC") ke mofuta oa lintho tse entsoeng ka motsoako o thehiloeng holim'a carbon le ho matlafatsoa ke carbon fiber le lihlahisoa tsa eona (carbon fiber preform). E na le inertia ea carbon le matla a phahameng a carbon fiber. E na le thepa e ntle ea mochini, ho hanyetsa mocheso, ho hanyetsa kutu, ho fokotsa likhohlano le litšobotsi tsa motlakase le tsa motlakase.

CVD-SiCbarbotage na le litšobotsi tsa sebopeho junifomo, thepa diseke ee, phahameng mocheso hanyetsa, khanyetso oxidation, bohloeki phahameng, acid & alkali ho hanyetsa le reagent manyolo, le thepa e tsitsitseng 'meleng le lik'hemik'hale.

Ha ho bapisoa le lisebelisoa tse phahameng tsa graphite, graphite e qala ho oxidize ho 400C, e tla baka tahlehelo ea phofo ka lebaka la oxidation, e leng se bakang tšilafalo ea tikoloho ho lisebelisoa tsa peripheral le likamore tsa vacuum, le ho eketsa litšila tsa tikoloho e hloekileng.

Leha ho le joalo, ho roala ha SiC ho ka boloka botsitso ba 'mele le lik'hemik'hale ka likhato tse 1600, E sebelisoa haholo indastering ea sejoale-joale, haholo indastering ea semiconductor.

Khamphani ea rona e fana ka lits'ebeletso tsa ts'ebetso ea ho roala SiC ka mokhoa oa CVD holim'a graphite, li-ceramics le lisebelisoa tse ling, e le hore likhase tse khethehileng tse nang le carbon le silicon li sebetsane le mocheso o phahameng ho fumana limolek'hule tsa SiC tse hloekileng, limolek'hule tse behiloeng holim'a thepa e koahetsoeng, ho etsa lera la tšireletso la SIC. SIC e entsoeng e tlamahane ka thata ho setsi sa graphite, e fana ka lisebelisoa tse khethehileng tsa graphite, kahoo e etsa hore bokaholimo ba graphite bo kopane, bo se ke ba e-ba le Porosity, ho hanyetsa mocheso o phahameng, ho hanyetsa kutu le ho hanyetsa oxidation.

 SiC coating process on graphite surface MOCVD susceptors

Lintlha tse ka sehloohong:

1. Ho hanyetsa mocheso o phahameng oa oxidation:

khanyetso ea oxidation e ntse e le ntle haholo ha mocheso o le holimo ho 1600 C.

2. Bohloeki bo phahameng: bo entsoeng ka ho kenngoa ha mouoane oa lik'hemik'hale tlas'a boemo bo phahameng ba mocheso oa chlorination.

3. Ho hanyetsa khoholeho ea mobu: boima bo phahameng, bokaholimo bo kopanetsoeng, likaroloana tse ntle.

4. Ho hanyetsa kutu: acid, alkali, letsoai le li-reagents tse phelang.

 

Lintlha tse ka sehloohong tsa CVD-SIC Coatings:

SiC-CVD

Botenya

(g/cc)

3.21

Matla a flexural

(Mpa)

470

Katoloso ea mocheso

(10-6/K)

4

Thermal conductivity

(W/mK)

300

Litšoantšo tse qaqileng

SiC coating process on graphite surface MOCVD susceptorsSiC coating process on graphite surface MOCVD susceptorsSiC coating process on graphite surface MOCVD susceptorsSiC coating process on graphite surface MOCVD susceptorsSiC coating process on graphite surface MOCVD susceptors

Lintlha tsa Khampani

111

Lisebelisoa tsa Feme

222

Sebaka sa polokelo

333

Setifikeiti

Setifikeiti22

 


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