2022 ea boleng bo holimo MOCVD Susceptor Reka inthaneteng China, Sic Graphite epitaxy susceptors

2022 high quality MOCVD Susceptor Reka Inthaneteng Chaena, Sic Graphite epitaxy susceptors Featured Image

Tlhaloso e Khutšoanyane:

SiC coating ea Graphite substrate bakeng sa lits'ebetso tsa Semiconductor e hlahisa karolo e nang le bohloeki bo phahameng le ho hanyetsa sepakapaka sa oxidizing. CVD SiC kapa CVI SiC e sebelisoa ho Graphite ea likarolo tse bonolo kapa tse rarahaneng tsa moralo. Ho roala ho ka sebelisoa ka botenya bo sa tšoaneng le likarolong tse kholo haholo.

Sebaka sa Tšimoloho:Zhejiang, China (Bohareng)

Nomoro ea Mohlala:Nomoro ea Mohlala:

Sebopeho sa Lik'hemik'hale:SiC e koahetsoeng ka graphite

Flexural matla:470Mpa

Thermal conductivity:300 W/mK

Boleng:E phethahetseng

Mosebetsi:CVD-SiC

Kopo:Semiconductor /Photovoltaic

Tekano:3.21 g/cc

Katoloso ea mocheso:4 10-6/K

Molora: <5ppm

Mohlala:E fumaneha

Khoutu ea HS:6903100000

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2022 boleng bo phahameng ba MOCVD Susceptor Reka inthaneteng China, Sic Graphite epitaxy susceptors,
Li-substrates tse tšehetsang graphite, Li-Susceptors tsa Graphite, Li-Susceptors tsa Graphite bakeng sa SiC Epitaxy, Li-susceptors tsa Graphite bakeng sa Silicon, Li-susceptors tsa graphite tse nang le silicon carbide coating, LITHUTO TSA GRAPHITE HO SEMICONDUCTOR Graphite Trays Graphite Wafer Susceptors HIGH PURITY GRAPHITE Tools Opto-electronics, sethala sa sathelaete bakeng sa MOCVD, Li-platform tsa satellite tsa graphite tse koahetsoeng ke SiC bakeng sa MOCVD,

Melemo e khethehileng ea li-susceptors tsa graphite tse koahetsoeng ka SiC li kenyelletsa bohloeki bo phahameng haholo, ho roala homogenous le bophelo bo botle ba ts'ebeletso. Li boetse li na le khanyetso e phahameng ea lik'hemik'hale le thepa ea botsitso ba mocheso.

SiC coating ea Graphite substrate bakeng sa lits'ebetso tsa Semiconductor e hlahisa karolo e nang le bohloeki bo phahameng le ho hanyetsa sepakapaka sa oxidizing.
CVD SiC kapa CVI SiC e sebelisoa ho Graphite ea likarolo tse bonolo kapa tse rarahaneng tsa moralo. Ho roala ho ka sebelisoa ka botenya bo sa tšoaneng le likarolong tse kholo haholo.

SiC e koahelang / e koahetsoeng ka MOCVD Susceptor

Likaroloana:
· Excellent Thermal Shock Resistance
· Ho Hanyetsa ho Tšoaroa ha 'Mele ho babatsehang
· Excellent Chemical Resistance
· Bohloeki bo Phahameng ka ho Fetisisa
· Ho fumaneha ka Sebopeho se Ratang
· E ka sebelisoa tlas'a Oxidizing Atmosphere

Maemo a Tloaelehileng a Base Graphite Material:

Tekano e Hlahang:	1.85 g/cm3
Ho hanyetsa Motlakase:	11 μΩm
Flexural Strenth:	49 MPa (500kgf/cm2)
Bothata ba Lebōpo:	58
Molora:	<5ppm
Thermal Conductivity:	116 W/mK (100 kcal/mhr-℃)

Carbon e fana ka li-susceptors le likarolo tsa graphite bakeng sa lisebelisoa tsohle tsa morao-rao tsa epitaxy. Potefolio ea rona e kenyelletsa li-barrel susceptors bakeng sa li-unit tse kentsoeng le tsa LPE, li-susceptors tsa pancake tsa LPE, CSD, le likarolo tsa Gemini, le li-susceptors tse nang le sephaephe se le seng bakeng sa likarolo tse sebelisitsoeng le tsa ASM. e fana ka moralo o nepahetseng bakeng sa ts'ebeliso ea hau.