SiC Sintered Silicon Carbide Ceramic Bushing

Short Description:

Chemical Composition:Silicon Carbide

Hardness:≥110 HS

Density:3.10-3.15 g/cm3

Bending Strength:>350MPa

Thermal conductivity:>120

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Sintered Silicon Carbide Ceramic Bushing

Pressureless sintered silicon carbide (SSIC) is produced using very fine SiC powder containing sintering additives. It is processed using forming methods typical for other ceramics and sintered at 2,000 to 2,200° C in an inert gas atmosphere.As well as fine-grained versions, with grain sizes < 5 um, coarse-grained versions with grain sizes of up to 1.5 mm are available.

SSIC is distinguished by high strength that stays nearly constant up to very high temperatures (approximately 1,600° C), maintaining that strength over long periods!

Product advantages:

High temperature oxidation resistance

Excellent Corrosion resistance

Good Abrasion resistance

High coefficient of heat conductivity
Self-lubricity, low density
High hardness
Customized design.

Technical properties:

Items	Unit	Data
Hardness	HS	≥110
Porosity Rate	%	<0.3
Density	g/cm3	3.10-3.15
Compressive	MPa	>2200
Fractural Strength	MPa	>350
Coefficient of expansion	10/°C	4.0
Content of Sic	%	≥99
Thermal conductivity	W/m.k	>120
Elastic Modulus	GPa	≥400
Temperature	°C	1380