Sussetpor dahaarka leh ee SiC waa qayb muhiim ah oo loo isticmaalo hababka wax soo saarka semiconductor ee kala duwan. Waxaan u isticmaalnaa tignoolajiyadayada rukhsadda leh si aan uga dhigno Suscetpor-dahaarka SiC oo leh nadiif aad u sarreeya, lebis daahan wanaagsan iyo nolol adeeg oo aad u wanaagsan, iyo sidoo kale iska caabbinta kiimikada sare iyo guryaha xasilloonida kuleylka.
Tilmaamaha alaabtayada:
1. Iska caabbinta oksaydhka heerkulka sare ilaa 1700 ℃.
2. Nadiif sare iyo isku mid ahaanshaha kulaylka
3. iska caabin daxalka heer sare ah: acid, alkali, cusbo iyo reagents organic.
4. Qalafsanaan sare, oogada is haysta, qaybo yaryar.
5. Cimri dheer oo adeeg iyo waarta
| CVD SiC薄膜基本物理性能 Tilmaamaha asaasiga ah ee CVD SiCdaahan | |
| 性质 / Hanti | 典型数值 / Qiimaha caadiga ah |
| 晶体结构 / Dhismaha Crystal | FCC β wejiga多晶，主要为（111) 取向 |
| 密度 / Cufnaanta | 3.21 g/cm³ |
| 硬度 / Adag | 2500 维氏硬度（500g oo culeys ah |
| 晶粒大小 / Hadhuudhka Size | 2 ~ 10μm |
| 纯度 / Nadiifnimada Kiimikada | 99.99995% |
| 热容 / Awoodda kulaylka | 640 · kg-1·K-1 |
| 升华温度 / Heerkulka Sublimation | 2700 ℃ |
| 抗弯强度 / Xoog Jilicsan | 415 MPa RT 4-dhibic |
| 杨氏模量 Modulka da'da yar | 430 Gpa 4pt laab, 1300 ℃ |
| 导热系数 / ThermalHab-dhaqanka | 300W·m-1·K-1 |
| 热膨胀系数 / Balaadhinta kulaylka (CTE) | 4.5×10-6K-1 |
Si diiran kuugu soo dhawoow inaad soo booqato warshadeena, aynu wada hadal dheeraad ah yeelano!
