Qaybta SiC Dahaarka Garaafka Halfmoonis a furahaqayb loo isticmaalo hababka wax soo saarka semiconductor, gaar ahaan qalabka SiC epitaxial.Waxaan isticmaalnaa tignoolajiyadayada lahaanshaha si aan uga dhigno qayb ka mid ah dayaxa badhkiidaahirnimo aad u saraysa,wanaagsandaahanisku midnimoiyo nolol adeeg oo aad u wanaagsan, sidoo kalecaabbinta kiimikada sare iyo sifooyinka xasiloonida kulaylka.
VET Energy waa ahsoo saaraha dhabta ah ee alaabta graphite iyo silikoon carbide oo leh daahan CVD,keeni karakala duwanqaybo gaar ah oo loogu talagalay semiconductor iyo warshadaha sawirkavoltaic. Okooxdayada farsamo waxay ka yimaadaan hay'adaha cilmi-baarista gudaha ee ugu sarreeya, waxay ku siin karaan xalal qalab xirfadeed oo dheeraad ahadiga.
Waxaan si joogto ah u horumarinaa habab horumarsan si aan u bixinno agab aad u horumarsan,iyowaxay ka shaqeeyeen tignoolajiyada gaarka ah ee rukhsadda leh, taas oo ka dhigi karta isku xidhka dahaarka iyo substrate-ka mid adag oo u nugul goynta.
FCunista alaabtayada:
1. Iska caabbinta oksaydhka heerkulka sare ilaa 1700℃.
2. daahir sare iyolebbiska kulaylka
3. iska caabin daxalka heer sare ah: acid, alkali, cusbo iyo reagents organic.
4. Adag sare, oogada is haysta, qaybo yaryar.
5. Cimri dheer oo adeeg iyo waarta
| CVD SiC薄膜基本物理性能 Tilmaamaha asaasiga ah ee CVD SiCdaahan | |
| 性质 / Hanti | 典型数值 / Qiimaha caadiga ah |
| 晶体结构 / Dhismaha Crystal | FCC β wejiga多晶，主要为（111) 取向 |
| 密度 / Cufnaanta | 3.21 g/cm³ |
| 硬度 / Adag | 2500 维氏硬度（500g oo culeys ah |
| 晶粒大小 / Hadhuudhka Size | 2 ~ 10μm |
| 纯度 / Nadiifnimada Kiimikada | 99.99995% |
| 热容 / Awoodda kulaylka | 640 · kg-1·K-1 |
| 升华温度 / Heerkulka Sublimation | 2700 ℃ |
| 抗弯强度 / Xoog Jilicsan | 415 MPa RT 4-dhibic |
| 杨氏模量 /Dhallinyarada Modulus | 430 Gpa 4pt laab, 1300 ℃ |
| 导热系数 / ThermalHab-dhaqanka | 300W·m-1·K-1 |
| 热膨胀系数 / Balaadhinta kulaylka (CTE) | 4.5×10-6K-1 |
Si diiran kuugu soo dhawoow inaad soo booqato warshadeena, aynu wada hadal dheeraad ah yeelano!
