Qalabka semiconductor waa xudunta u ah qalabka casriga ah ee warshadaha casriga ah, oo si ballaaran loogu isticmaalo kombiyuutarada, elektiroonigga macaamiisha, isgaarsiinta shabakada, qalabka elektaroonigga ah, iyo meelaha kale ee xudunta u ah, warshadaha semiconductor waxay inta badan ka kooban yihiin afar qaybood oo aasaasi ah: wareegyada isku dhafan, qalabka optoelectronic, qalab discrete, dareere, kaas oo ka badan 80% ee wareegyada isku dhafan, inta badan iyo semiconductor iyo isku dhafan wareegga u dhigma.
Wareegga isku dhafan, marka loo eego qaybta badeecada waxaa badanaa loo qaybiyaa afar qaybood: microprocessor, xusuusta, aaladaha macquulka ah, qaybaha jilitaanka. Si kastaba ha ahaatee, iyadoo balaadhinta joogtada ah ee goobta codsiga ee qalabka semiconductor, marar badan oo gaar ah waxay u baahan yihiin semiconductors si ay u awoodaan inay u hoggaansamaan isticmaalka heerkulka sare, shucaaca xooggan, awoodda sare iyo deegaanka kale, ha dhaawicin, jiilka kowaad iyo labaad ee Qalabka semiconductor waa kuwo aan awood lahayn, sidaas darteed jiilka saddexaad ee qalabka semiconductor ayaa yimid.
Waqtigan xaadirka ah, faraqa ballaaran ee qalabka semiconductor ee ay matalaansilikoon carbide(SiC), gallium nitride (GaN), zinc oxide (ZnO), dheeman, aluminium nitride (AlN) ayaa ku jira suuqa ugu weyn oo leh faa'iidooyin waaweyn, oo si wada jir ah loogu tilmaamo agabka jiilka saddexaad. Jiilka saddexaad ee qalabka semiconductor oo leh ballac ballaadhan oo bannaan, kororka sare ee beerta korantada, kuleylka kuleylka, heerka korantada elektiroonigga ah iyo awoodda sare ee iska caabinta shucaaca, aad ugu habboon samaynta heerkulka sare, soo noqnoqda sare, iska caabinta shucaaca iyo aaladaha awoodda sare , sida caadiga ah loo yaqaan qalabka semiconductor bandgap ballaaran (Balac band ga mamnuuc ah ayaa ka weyn 2.2 eV), sidoo kale loo yaqaan heerkulka sare qalabka semiconductor. Laga soo bilaabo cilmi-baarista hadda jirta ee qalabka jiilka saddexaad ee semiconductor iyo aaladaha, silicon carbide iyo gallium nitride semiconductor maaddooyinka ayaa aad u bislaaday, iyotignoolajiyada carbide siliconwaa kan ugu qaan-gaarka ah, halka cilmi-baarista zinc oxide, dheeman, aluminium nitride iyo qalab kale ay weli ku jiraan marxaladda hore.
Alaabta iyo Guryahoodu
Silikoon carbidealaabta waxaa si weyn loo isticmaalaa in kubada dhoobada, valves, qalabka semiconductor, gyros, qalabka wax lagu qiyaaso, aerospace iyo beeraha kale, waxa uu noqday wax aan la bedeli karin in beeraha badan oo warshadaha.
SiC waa nooc ka mid ah superlatice dabiiciga ah iyo nooc-badan oo isku mid ah. Waxaa jira in ka badan 200 (hadda loo yaqaan) qoysaska polytypic-ka isku midka ah iyadoo ay ugu wacan tahay faraqa xirxirida isku xigxiga ee u dhexeeya lakabyada diatomic Si iyo C, taas oo horseedaysa qaabab kala duwan oo crystal ah. Sidaa darteed, SiC waxay aad ugu habboon tahay jiilka cusub ee diode iftiiminta iftiinka (LED) walxaha substrate-ka, qalabka elektiroonigga ah ee awoodda sare leh.
| sifo | |
| hanti jireed | Adayg sare (3000kg/mm), gooyn kara ruby |
| Iska caabbinta xirashada sare, labaad oo kaliya dheeman | |
| Dareenka kulaylka ayaa 3 jeer ka sarreeya kan Si iyo 8 ~ 10 jeer ka sarreeya kan GaAs. | |
| Xasiloonida kulaylka ee SiC waa mid sare oo aan suurtagal ahayn in lagu dhalaaliyo cadaadiska jawiga | |
| Waxqabadka wanaagsan ee kulaylka ayaa aad muhiim ugu ah aaladaha awooda sare leh | |
|
hantida kiimikada | Iska caabbinta daxalka oo aad u xoog badan, u adkaysata ku dhawaad wax kasta oo daxalka la og yahay heerkulka qolka |
| Dusha sare ee SiC si fudud ayay oksaydhisku u samaysaa SiO, lakab khafiif ah, waxay ka hortagi kartaa oksaydhkeeda dheeraadka ah, gudaha Ka sarreeya 1700 ℃, filimka oksaydhku wuu dhalaali oo si degdeg ah u oksaydhiyaa | |
| Farqiga u dhexeeya 4H-SIC iyo 6H-SIC waa qiyaastii 3 jeer ka Si iyo 2 jeer ka GaAs: Qulqulka goobta korantada ee burburay waa amar ka sarreeya Si, iyo xawaaraha qulqulka elektarooniga ah waa mid buuxa Laba jeer iyo badh ayaa Si. Farqiga u dhexeeya 4H-SIC wuu ka ballaaran yahay kan 6H-SIC |
Waqtiga boostada: Agoosto-01-2022