SiC dahaarka garaafka MOCVD Wafer sidayaal

Sharaxaad Gaaban:

Daahan SiC ee substrate-ka Graphite ee codsiyada Semiconductor waxay soo saartaa qayb leh nadiifnimo sare iyo iska caabin u ah jawiga oksaydhka. CVD SiC ama CVI SiC waxaa lagu dabaqaa Graphite qaybo naqshadeed fudud ama kakan. Dahaarka waxaa lagu dabaqi karaa dhumucyo kala duwan iyo qaybo aad u ballaaran.


  • Meesha Asal ahaan:Zhejiang, Shiinaha (Dhul-weynaha)
  • Nambarka Qaabka:Nambarka Qaabka:
  • Halabuurka Kiimikada:Garaafyada dahaarka leh ee SiC
  • Xoog dabacsanaan leh:470Mpa
  • Dhaqdhaqaaqa kulaylka:300 W/mK
  • Tayada:Wanaagsan
  • Shaqada:CVD-SiC
  • Codsiga:Semiconductor/Photovoltaic
  • Cufnaanta:3.21 g/cc
  • Balaadhinta kulaylka:4 10-6/K
  • Dambas: <5pm
  • Tusaale:La heli karo
  • Koodhka HS:6903100000
  • Faahfaahinta Alaabta

    Tags Product

    SiC dahaarka graphite MOCVD Wafer sideyaal , Susceptors GraphiteSiC Epitaxy,
    Kaarboonku waxa uu keenaa wax-qabadyada, Susceptors graphite epitaxy, Qaybaha taageerada graphite, Susceptor MOCVD, SiC Epitaxy, Wafer Susceptors,

    Sharaxaada Alaabta

    Faa'iidooyinka gaarka ah ee kuwa siciga-dahaarka leh ee susceptors-garafeedka waxaa ka mid ah nadiif aad u sarreeya, daahan isku mid ah iyo nolol adeeg oo aad u wanaagsan. Waxay sidoo kale leeyihiin iska caabin sare oo kiimiko ah iyo sifooyin xasilloon oo kulaylka.

    Daahan SiC ee substrate-ka Graphite ee codsiyada Semiconductor waxay soo saartaa qayb leh nadiifnimo sare iyo iska caabin u ah jawiga oksaydhka.
    CVD SiC ama CVI SiC waxaa lagu dabaqaa Graphite qaybo naqshadeed fudud ama kakan. Dahaarka waxaa lagu dabaqi karaa dhumucyo kala duwan iyo qaybo aad u ballaaran.

    Dahaarka SiC/dahaarka leh ee MOCVD Susceptor

    Astaamaha:
    Caabbinta naxdinta kulaylka ee heer sare ah
    Iska caabin naxdin jidheed oo heersare ah
    · Iska caabin Kiimiko oo heersare ah
    Nadiifinta Sare ee Sare
    Helitaanka qaab isku dhafan
    Waxaa lagu isticmaali karaa hoostiisa Oxidizing Atmosphere

    Codsiga:

    2

     

    Astaamaha Caadiga ah ee Qalabka Garaafiga ee Saldhigga:

    Cufnaanta muuqata: 1.85 g/cm3
    Iska caabin Koronto: 11 μΩm
    Xoog Jilicsan: 49 MPa (500kgf/cm2)
    Adag ee Xeebta: 58
    Dambas: <5pm
    Habdhaqanka Kulaylka: 116 W/mK (100 kcal/mhr-℃)

    Kaarboonku waxa uu keenaa wax-qabadyadaiyo qaybaha graphite ee dhammaan reactors epitaxy ee hadda jira. Bootfooliyadayada waxaa ka mid ah kuwa qaboojiyaha foosto oo loogu talagalay qaybaha LPE iyo LPE, kuwa qaboojiyaha canjeelada ee LPE, CSD, iyo Gemini, iyo kuwa hal-wafer ah oo loogu talagalay cutubyada la codsado iyo ASM. Iyadoo la isku darayo iskaashi xooggan oo lala yeesho OEM-yada hormuudka ah, khibradda qalabka iyo aqoonta wax soo saarka, SGL waxay ku siinaysaa naqshada ugu fican codsigaaga.

     


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