SiC dahaarka Graphite Carriers, daahan sic, daahan SiC dahaarka ah ee Graphite substrate for Semiconductor

Silikon carbide dahaarka lehgraphite disk waa in lagu diyaariyo lakabka ilaalinta silikoon carbide ee dusha sare ee garaafka iyadoo la isticmaalayo uumiga jirka ama kiimikaad iyo buufin. Lakabka silikoon carbide ilaalinta la diyaariyey ayaa si adag loogu xidhi karaa matrix graphite, samaynta dusha sare ee graphite salka cufan oo xor ah oo bannaan, siinta graphite matrix siyaalo gaar ah, oo ay ku jiraan iska caabin oksaydhka, acid iyo caabbinta alkali, caabbinta nabaad guurka, iska caabinta daxalka. iwm. Waqtigan xaadirka ah, daahan Gan waa mid ka mid ah qaybaha ugu wanaagsan ee asaasiga ah ee koritaanka epitaxial ee carbide silicon.

Silicon carbide semiconductor waa sheyga xudunta u ah semiconductor-ka farqiga ballaaran ee dhowaan la sameeyay. Qalabkeedu waxay leeyihiin sifooyinka caabbinta heerkulka sare, caabbinta korantada sare, soo noqnoqda sare, awood sare iyo caabbinta shucaaca. Waxay leedahay faa'iidooyinka xawaaraha beddelka degdega ah iyo hufnaanta sare. Waxay si weyn u dhimi kartaa isticmaalka awoodda alaabta, hagaajinta waxtarka beddelka tamarta waxayna yareyn kartaa mugga alaabta. Waxaa inta badan loo adeegsadaa isgaarsiinta 5g, difaaca qaranka iyo warshadaha militariga Goobta RF ee ay matalaan hawada hawada iyo goobta korantada korantada oo ay matalaan gawaarida tamarta cusub iyo "kaabayaasha cusub" waxay leeyihiin rajooyin suuq oo cad oo la taaban karo ee dhinacyada rayidka iyo militariga labadaba.

Substrate-ka carbide silikoon waa sheyga xudunta u ah semiconductor-ka farqiga ballaadhan ee dhawaan la sameeyay. Substrate-ka silikoon carbide waxaa inta badan loo isticmaalaa mikrowave electronics, korontada iyo meelaha kale. Waxay ku taal dhamaadka hore ee silsiladda warshadaha semiconductor farqiga ballaaran waana gooyn-geeska iyo walxaha aasaasiga ah ee muhiimka ah. Substrate carbide Silicon waxaa loo qaybin karaa laba nooc: insulating semi iyo conductive. Waxaa ka mid ah, substrate-ka silikoon carbide ee dahaarka ah wuxuu leeyahay iska caabin sare (iska caabin ≥ 105 Ω · cm). Substrate insulating substrate oo ay weheliso heterogeneous gallium nitride epitaxial sheet waxaa loo isticmaali karaa sida walxaha aaladaha RF, kaas oo inta badan loo adeegsado isgaarsiinta 5g, difaaca qaranka iyo warshadaha militariga ee muuqaalka kore; Midda kale waa substrate silikon carbide conductive leh iska caabin hoose (kala duwanaanta iska caabintu waa 15 ~ 30m Ω · cm). Epitaxy-ka isku midka ah ee substrate-ka silikoon carbide substrate iyo silikoon carbide waxa loo isticmaali karaa agabka awooda. Xaaladaha codsiga ugu muhiimsan waa baabuurta korontada, nidaamyada korontada iyo goobaha kale