Sidee lakabyada epitaxial u caawiyaan qalabka semiconductor?

Asalka magaca wafer epitaxial

Marka hore, aan faafinno fikrad yar: diyaarinta waferka waxaa ku jira laba xiriiriye oo waaweyn: diyaarinta substrate iyo habka epitaxial. Substrate-ku waa wafer ka samaysan hal walxo semiconductor. Substrate-ku wuxuu si toos ah u gali karaa habka wax soo saarka waferka si uu u soo saaro qalabka semiconductor, ama waxaa lagu farsameyn karaa hababka epitaxial si loo soo saaro wafers epitaxial. Epitaxy waxaa loola jeedaa habka koraya lakab cusub oo hal crystal ah oo ku yaala hal substrate crystal kaas oo si taxadar leh looga shaqeeyay jarida, shiidi, polishing, iwm. Kalluunka cusub ee cusub wuxuu noqon karaa wax la mid ah substrate-ka, ama waxay noqon kartaa a Waxyaabo kala duwan (isku mid ah) epitaxy ama heteroepitaxy). Sababtoo ah lakabka cusub ee crystal-ka ayaa sii fidaya oo u koraa si waafaqsan marxaladda crystal ee substrate-ka, waxaa loo yaqaannaa lakabka epitaxial ( dhumucdiisuna badanaa waa dhowr microns, qaadashada silikoon tusaale ahaan: macnaha koritaanka silikoon epitaxial wuxuu ku yaalaa silikoon kali ah. Substrate crystal oo leh jihada crystal gaar ah oo leh hufnaan qaab dhismeedka shabagga wanaagsan iyo caabbinta kala duwan iyo dhumucdiisuna waxay la mid tahay jihada crystal sida substrate-ka la koray), iyo substrate leh epitaxial. lakabka waxaa loo yaqaan wafer epitaxial (epitaxial wafer = epitaxial layer + substrate). Marka qalabka lagu sameeyo lakabka epitaxial, waxaa loo yaqaan epitaxy togan. Haddii qalabka lagu sameeyo substrate-ka, waxa loo yaqaannaa epitaxy-ga gadaale. Waqtigaan, lakabka epitaxial kaliya wuxuu ciyaaraa door taageero.

Wafer sifaysan

Hababka koritaanka Epitaxial

Molecular beam epitaxy (MBE): Waa tignoolajiyada kobaca epitaxial semiconductor oo lagu sameeyay xaalado faaruq ah oo aad u sarreeya. Farsamadan, walxaha isha waxaa lagu soo daadiyaa qaab alwaax ah atamka ama molecules ka dibna lagu shubaa substrate crystalline. MBE waa tignoolajiyada kobaca filimada khafiifka ah ee semiconductor aad u sax ah oo la kontarooli karo kaas oo si sax ah u xakameyn kara dhumucda walxaha la dhigay heerka atomikada.
Birta organic CVD (MOCVD): Habka MOCVD, birta organic iyo gaaska hydride N gaaska ay ku jiraan walxaha loo baahan yahay waxaa la siiyaa substrate heerkulka ku habboon, mara fal-celin kiimikaad si ay u abuuraan walxaha semiconductor ee loo baahan yahay, oo waxaa lagu shubaa substrate. on, halka xeryahooda hadhay iyo alaabta falcelinta la sii daayo.
Marxaladda uumiga Epitaxy (VPE): Wajiga uumiga epitaxy waa tignoolajiyad muhiim ah oo inta badan loo isticmaalo soosaarka aaladaha semiconductor. Mabda'a aasaasiga ah ayaa ah in la raro uumiga walxaha asaasiga ah ama iskudhisyada ku jira gaaska side, iyo in lagu shubo kiristaalo substrate iyada oo loo marayo falcelin kiimikaad.

Waa maxay dhibaatooyinka uu xalliyo habka epitaxy?

Kaliya alaabada hal-abuurka ah ma buuxin karto baahida sii kordheysa ee soo saarista aaladaha semiconductor ee kala duwan. Sidaa darteed, kobaca epitaxial, tignoolajiyada korriinka walxaha dhuuban-lakabka ah, ayaa la sameeyay dhamaadkii 1959. Haddaba maxay tahay tabarruca gaarka ah ee tignoolajiyada epitaxy ay ku leedahay horumarinta agabka?

Silicon, markii tignoolajiyada koritaanka silikoon epitaxial ay bilaabatay, runtii waxay ahayd waqti adag wax soo saarka silikoon-soo noqnoqoshada sare iyo awood sare. Marka loo eego mabaadi'da transistor-ka, si loo helo soo noqnoqoshada sare iyo awoodda sare, danab burburka aagga ururiyaha waa inuu ahaadaa mid sarreeya iyo iska caabbinta taxanaha ah waa inay ahaataa mid yar, taas oo ah, hoos u dhaca korantada saturation waa inuu ahaadaa mid yar. Midda hore waxay u baahan tahay in iska caabbinta walxaha ku jirta goobta wax lagu ururinayo ay noqoto mid sare, halka kan dambe uu u baahan yahay in iska caabbinta walxaha ku jira goobta wax lagu ururinayo ay tahay mid hooseeya. Labada gobol waa kuwo iska soo horjeeda. Haddii dhumucda walxaha ku jira aagga ururiyaha la yareeyo si loo yareeyo caabbinta taxanaha ah, maraqa silikoonku wuxuu noqon doonaa mid aad u dhuuban oo jilicsan si loo farsameeyo. Haddii caabbinta walxaha la yareeyo, waxay ka hor iman doontaa shuruudaha ugu horreeya. Si kastaba ha ahaatee, horumarinta tignoolajiyada epitaxial ayaa lagu guuleystay. xaliyay dhibkan.

Xalka: Ku kori lakabka epitaxial-adkeysiga sare ee substrate aad u hooseeya, oo samee qalabka lakabka epitaxial. Lakabka sare ee epitaxial-ka-caabbinta wuxuu hubiyaa in tuubku leeyahay koronto jaban oo sarreeya, halka substrate-ka-soo-celinta hooseeya uu sidoo kale hoos u dhigo caabbinta substrate-ka, taas oo hoos u dhigaysa hoos u dhaca korantada saturation, taas oo xallinaysa khilaafka u dhexeeya labada.

Intaa waxaa dheer, teknoolajiyada epitaxy sida wajiga uumiga epitaxy iyo dareeraha wajiga Epitaxy ee GaAs iyo kuwa kale III-V, II-VI iyo walxaha kale ee unugyadu semiconductor ayaa sidoo kale si weyn loo horumariyo waxayna noqdeen saldhigga ugu badan ee qalabka microwave, qalabka optoelectronic, awoodda. Waa tignoolajiyada geeddi-socodka lagama maarmaanka u ah soo-saarka aaladaha, gaar ahaan codsiga guusha leh ee alwaax molecular iyo tignoolajiyada wajiga uumiga dabiiciga ah ee birta ee lakabyada khafiifka ah, superlatices, ceelasha quantum, superlatices adag, iyo lakab khafiif ah oo heer atomic ah, taas oo ah tallaabo cusub oo cilmi baaris ah. Horumarinta "injineernimada suunka tamarta" ee goobta ayaa dhigay aasaas adag.

Codsiyada wax ku oolka ah, qalabyada semiconductor-ka ballaaran ayaa had iyo jeer lagu sameeyaa lakabka epitaxial, iyo waferka silikoon carbide laftiisa ayaa kaliya u adeega sida substrate-ka. Sidaa darteed, xakamaynta lakabka epitaxial waa qayb muhiim ah oo ka mid ah warshadaha semiconductor bandgap ballaaran.

7 xirfadood oo waaweyn ee tignoolajiyada epitaxy

1. Lakabyada caabbinta sare (hooseeya) ee epitaxial waxaa lagu kori karaa hooseeyo (sare) substrates caabbinta.
2. Lakabka nooca N (P) ee epitaxial waxa lagu kori karaa substrate-ka nooca P (N) si uu toos ugu sameeyo isgoysyada PN. Ma jirto wax dhibaato ah oo magdhow ah marka la isticmaalayo habka fidinta si loo sameeyo isku xirka PN ee hal substrate crystal.
3. Marka lagu daro tignoolajiyada maaskarada, kobaca epitaxial ee xulashada ayaa lagu sameeyaa meelaha loo qoondeeyay, abuurista shuruudo loogu talagalay soo saarista wareegyada isku dhafan iyo qalabka leh qaabab gaar ah.
4. Nooca iyo xoojinta doping-ka waa la bedeli karaa iyadoo loo eegayo baahiyaha inta lagu jiro habka koritaanka epitaxial. Isbeddelka feejignaanta wuxuu noqon karaa isbeddel degdeg ah ama isbeddel gaabis ah.
5. Waxay kori kartaa kala duwanaansho, lakabyo badan, xeryahooda qaybo badan iyo lakabyo khafiif ah oo leh qaybo kala duwan.
6. Kobaca Epitaxial waxaa lagu samayn karaa heerkul ka hooseeya barta dhalaalka ee walxaha, heerka korriinka waa la xakameyn karaa, iyo koritaanka epitaxial ee dhumucda heerka atomiga waa la gaari karaa.
7. Waxa ay kori kartaa hal qalab oo crystal ah oo aan la jiidi karin, sida GaN, hal lakab oo crystals oo ah xeryahooda jaamacadeed iyo kuwa afar geesle ah, iwm.