Qiimaha ugu hooseeya Shiinaha Heater-ku-kululaynta Garaafyada Tayada Sare leh ee Polycrystalline Silicon Ingot Foornada

Qiimaha ugu hooseeya Shiinaha Heater-ku-kululaynta Garaafyada Tayada Sare leh ee Foornada Polycrystalline Silicon Ingot Sawirka

Sharaxaad Gaaban:

daahirnimo <5pm
‣ Isku mid ahaanshaha doping wanaagsan
‣ Cufnaanta sare iyo dhejinta
‣ Iska caabin wanaagsan oo ka hortag ah iyo kaarboon

‣ Habaynta xirfadlayaasha
‣ Waqti yar oo hogaanka ah
‣ Sahayda deggan
‣ Xakamaynta tayada iyo horumarinta joogtada ah

Epitaxy of GaN on Sapphire(RGB/Mini/Mikro LED);Epitax of GaN on Si Substrate(UVC);Epitax of GaN on Si Substrate(Aaladaha Elektarooniga ah);Epitax of Si on Si Substrate(wareeg isku dhafan);Epitax of SiC on SiC Substrate(Substrate);Epitax of InP on InP

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Waxaan sii wadeynaa kordhinta iyo hagaajinta xalalkayaga iyo adeegeena. Isla mar ahaantaana, waxaan si firfircoon u shaqeeyaan si ay u sameeyaan cilmi-baarista iyo kor u qaadida Qiimaha ugu hooseeya ee Shiinaha Tayada High Quality Customized Graphite Heater for Polycrystalline Silicon Ingot Foornada, Our ganacsi si degdeg ah u koray in size iyo caan ah sababta oo ah u huray buuxda in wax soo saarka tayada sare, qiimaha weyn ee alaabta iyo bixiyaha macaamiisha fantastic.
Waxaan sii wadeynaa kordhinta iyo hagaajinta xalalkayaga iyo adeegeena. Isla mar ahaantaana, waxaanu u shaqaynaa si firfircoon si aanu u samayno cilmi-baadhis iyo horumarinChina Graphite Foornada Kuleylinta, Goobta kulaylka ee Graphite, Kaliya si loo gaaro badeecada tayada wanaagsan si loo daboolo baahida macaamiisha, dhammaan alaabadayada iyo xalalka ayaa si adag loo kormeeray ka hor inta aan la dhoofin. Waxaan had iyo jeer ka fikirnaa su'aasha dhinaca macaamiisha, sababtoo ah waxaad ku guuleysataa, waan guuleysanay!

2022 tayo sare leh MOCVD Susceptor Iibso online gudaha Shiinaha

Cufnaanta muuqata:	1.85 g/cm3
Iska caabin Koronto:	11 μΩm
Xoog Jilicsan:	49 MPa (500kgf/cm2)
Adag ee Xeebta:	58
Dambas:	<5pm
Habdhaqanka Kulaylka:	116 W/mK (100 kcal/mhr-℃)

Wafer-ku waa jeex silikoon ah oo dhumucdiisu tahay 1 millimitir oo leh meel aad u fidsan taas oo ay ugu wacan tahay habraacyo farsamo ahaan aad u baahan. Isticmaalka ku xiga ayaa go'aaminaya habka korinta crystal waa in la isticmaalo. Habka Czochralski, tusaale ahaan, silikoon polycrystalline waa la dhalaaley iyo iniin qalin-qafiif ah ayaa lagu rusheeyaa silikoon dhalaalaysa. Kareemka abuurka ayaa markaa la rogaa oo si tartiib ah kor loogu qaadayaa. Kolossus aad u culus, monocrystal, ayaa natiijadiisa. Waxaa suurtogal ah in la doorto sifooyinka korantada ee monocrystal iyadoo lagu darayo unugyo yaryar oo saafi ah oo saafi ah. crystals-ka waxaa lagu daraa si waafaqsan tilmaamaha macaamiisha ka dibna la nadiifiyaa oo la gooyaa xaleef. Tallaabooyinka wax soo saarka dheeraadka ah ee kala duwan ka dib, macaamiishu waxay helayaan wafersyada gaarka ah ee baakadaha gaarka ah, taas oo u oggolaanaysa macaamilka inuu isticmaalo wafer isla markiiba khadka wax soo saarka.

Waferku waxa uu u baahan yahay in uu soo maro dhawr tillaabo ka hor inta aanu diyaar u ahayn isticmaalka qalabka elegtarooniga ah. Mid ka mid ah habka muhiimka ah waa silicon epitaxy, kaas oo wafers lagu qaado susceptors graphite. Guryaha iyo tayada dabaylaha ayaa saameyn muhiim ah ku leh tayada lakabka epitaxial ee wafer.

Wajiyada dhigista filimada khafiifka ah sida epitaxy ama MOCVD, VET waxay siisaa qalab garaafyo saafi ah oo loo isticmaalo in lagu taageero substrates ama "wafers". Ubucda habka, qalabkan, susceptors epitaxy ama satalaytka MOCVD, ayaa marka hore la hoos geeyaa jawiga dhigista:

Heerkulka sare
Faakuum sare.
Isticmaalka horudhaca gaaska gardarada ah.
Wax wasakhaysan eber, maqnaanshaha diirka.
Iska caabbinta asiidhyada xooggan inta lagu jiro hawlgallada nadiifinta