Gallium arsenide-fosfide qaab-dhismeedka epitaxial, oo la mid ah qaab-dhismeedka la soo saaray ee nooca substrate ASP (ET0.032.512TU), ee ah. soo saarista kiristaalo gaduudan oo guduudan.
Halbeegga farsamada aasaasiga ah
ilaa dhismayaasha gallium arsenide-fosfide
| 1,SubstrateGaAs | |
| a. Nooca habdhaqanka | elegtaroonig ah |
| b. Iska caabin, ohm-cm | 0,008 |
| c. Crystal-latticeorientation | (100) |
| d. Jilicsanaanta dusha sare | (1-3)° |
| 2. Lakabka Epitaxial GaAs1-х Pх | |
| a. Nooca habdhaqanka | elegtaroonig ah |
| b. Ka kooban fosfooraska ee lakabka kala-guurka | laga bilaabo х = 0 ilaa х ≈ 0,4 |
| c. Maadada fosfooraska ee lakabka halabuurka joogtada ah | х ≈ 0,4 |
| d. U fiirsashada qaade, сm3 | (0,2-3,0) · 1017 |
| e. Mawjadda dhererka ugu badnaan ee sawirka luminescence spectrum, nm | 645-673 nm |
| f. Mawjada dhererka ugu badnaan ee spectrum electroluminescence | 650-675 nm |
| g. Dhumucda lakabka joogtada ah, micron | Ugu yaraan 8 nm |
| h. Lakabka (wadarta), micron | Ugu yaraan 30 nm |
| 3 Saxan leh lakabka epitaxial | |
| a. leexin, micron | Ugu badnaan 100 um |
| b. Dhumucda, micron | 360-600 um |
| c. sentimitir labajibbaaran | Ugu yaraan 6 cm2 |
| d. Xoogan iftiin gaar ah (diffusionZn ka dib), cd/amp | Ugu yaraan 0,05 cd/amp |
