Kuchena kweSiC hupfu huchakanganisa zvakananga kunaka uye kushanda kweSiC single crystal inokura nePVT nzira, uye iyo mbishi yekugadzira SiC poda yakakwira kuchena Si upfu uye yakakwirira kuchena C hupfu, uye kuchena kweC hupfu huchabata zvakananga kuchena kweSiC poda.
Izvo zvigadzirwa zvinoshandiswa mukugadzira toner zvinowanzo sanganisira flake graphite, petroleum coke uye microcrystalline dombo inki. Iyo yakakwirira kuchena kwegraphite, iyo yakakwirira kukosha kwekushandisa. Nzira dzekuchenesa girafu dzinogona kukamurwa kuita nzira dzemuviri uye nzira dzemakemikari. Nzira dzekuchenesa muviri dzinosanganisira kuyerera uye kucheneswa kwekushisa kwepamusoro, uye nzira dzekuchenesa makemikari dzinosanganisira nzira yeasidhi-base, nzira yehydrofluoric acid uye nzira yekugocha yechloride. Pakati pavo, iyo yakakwira tembiricha yekuchenesa nzira inogona kushandisa iyo yakakwira kunyungudika (3773K) uye yekubikira nzvimbo yegraphite kuti iwane 4N5 uye yakakwirira kuchena, iyo inosanganisira evaporation uye kubuda kwetsvina ine yakaderera kuvira, kuitira kuti uwane chinangwa che kucheneswa [6]. Iyo yakakosha tekinoroji yekuchena kwakakwirira toner ndiko kubviswa kwekutsvaga tsvina. Yakasanganiswa nehunhu hwekucheneswa kwemakemikari uye yakanyanya kucheneswa tembiricha, yakasarudzika yakakamurwa inosanganiswa yakakwira tembiricha thermochemical yekuchenesa maitiro inogamuchirwa kuti iwane kucheneswa kwepamusoro kuchena toner zvinhu, uye kuchena kwechigadzirwa kunogona kupfuura 6N.
Chigadzirwa uye maitiro:
1, kuchena kwechigadzirwa≥99.9999% (6N);
2, kuchena kwakanyanya kabhoni poda kugadzikana, dhigirii yakakwira yegraphitization, kusvibiswa kushoma;
3, granularity uye mhando inogona kugadzirwa maererano nevashandisi.
Kunyanya kushandiswa kwechigadzirwa:
■ Synthesis yekuchena kwepamusoro SiC poda uye zvimwe zvakasimba chikamu chekugadzira carbide zvinhu
■ Rima madhaimani
■ Zvitsva zvinopisa zvinopisa zvezvigadzirwa zvemagetsi
■ High-end lithium bhatiri cathode zvinhu
∎ Mishonga yesimbi yakakosha zvinhu zvakare