SiC Sintered Silicon Carbide Ceramic Bushing

Tsanangudzo Pfupi

Kemikari Kuumbwa: Silicon Carbide

Kuoma:≥110 HS

Density:3.10-3.15 g/cm3

Kubhenda Simba:> 350MPa

Thermal conductivity:> 120

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Sintered Silicon Carbide Ceramic Bushing

Pressureless sintered silicon carbide (SSIC)inogadzirwa uchishandisa yakanakisa SiC poda ine sintering additives. Inogadziriswa uchishandisa nzira dzekugadzira dzinowanzoita mamwe maceramics uye sintered pa 2,000 kusvika 2,200 ° C muinert gas atmosphere.Pamwe chete nemhando dzakatsetseka-grained, dzine saizi yezviyo <5 um, coarse-grained versions nehukuru hwezviyo kusvika ku1.5. mm zviripo.

SSIC inosiyaniswa nesimba repamusoro rinogara rakada kufanana kusvika kune tembiricha yakanyanya (inenge 1,600 ° C), kuchengetedza iro simba kwenguva refu!

Product zvakanakira:

High tembiricha oxidation kuramba

Yakanakisa Corrosion resistance

Zvakanaka Abrasion kuramba

High coefficient yekupisa conductivity
Self-lubricity, low density
High kuoma
Customized dhizaini.

Technical properties:

Items	Unit	Data
Kuoma	HS	≥110
Porosity Rate	%	<0.3
Density	g/cm3	3.10-3.15
Compressive	MPa	>2200
Fractural Strength	MPa	>350
Coefficient yekuwedzera	10/°C	4.0
Zviri mukati meSic	%	≥99
Thermal conductivity	W/mk	>120
Elastic Modulus	GPa	≥400
Tembiricha	°C	1380