SiC yekuputira graphite MOCVD Wafer vatakuri, Graphite Susceptors yeSiC Epitaxy,
Carbon inopa susceptors, Graphite epitaxy susceptors, Graphite inotsigira substrates, MOCVD Susceptor, SiC Epitaxy, Wafer Susceptors,
Yakakosha mabhenefiti eSiC-yakavharwa graphite susceptors anosanganisira yakanyanya kuchena kuchena, homogenous coating uye yakanakisa hupenyu hwesevhisi. Vanewo high chemical resistance and thermal stability properties.
SiC yekupfekedza yeGraphite substrate yeSemiconductor application inoburitsa chikamu chine kuchena kwepamusoro uye kuramba kune oxidizing mamiriro.
CVD SiC kana CVI SiC inoiswa kune Graphite yezvakareruka kana zvakaoma dhizaini zvikamu. Coating inogona kuiswa muhukobvu hwakasiyana uye kune zvikamu zvakakura kwazvo.
Features:
· Yakanakisa Thermal Shock Resistance
· Yakanakisa Physical Shock Resistance
· Yakanakisa Chemical Resistance
· Super High Kuchena
· Kuwanikwa muComplex Shape
· Inoshandiswa pasi peOxidizing Atmosphere
Application:
Yakajairika Properties yeBase Graphite Material:
Inooneka Density: | 1.85 g/cm3 |
Electrical Resistivity: | 11 μΩm |
Flexural Strenth: | 49 MPa (500kgf/cm2) |
Shore Hardness: | 58 |
Madota: | <5ppm |
Thermal Conductivity: | 116 W/mK (100 kcal/mhr-℃) |
Carbon inopa susceptorsuye zvikamu zvegraphite kune ese aripo epitaxy reactor. Yedu portfolio inosanganisira mbiya susceptors yekuiswa uye LPE mauniti, pancake susceptors yeLPE, CSD, uye Gemini units, uye imwe-wafer susceptors yeakaiswa uye ASM mayunitsi.Nekubatanidza kudyidzana kwakasimba neanotungamira OEMs, hunyanzvi hwezvinhu uye ruzivo rwekugadzira, SGL. inopa dhizaini yakakwana yechishandiso chako.