Silicon carbide zvinhu Uye maitiro ayo

Semiconductor mudziyo ndiyo musimboti wemidziyo yemazuva ano yemaindasitiri, inoshandiswa zvakanyanya mumakomputa, zvemagetsi zvevatengi, network network, mota dzemagetsi, uye dzimwe nzvimbo dzepakati, iyo semiconductor indasitiri inonyanya kuumbwa nezvikamu zvina zvakakosha: maseketi akabatanidzwa, optoelectronic zvishandiso, discrete mudziyo, sensor, iyo inoverengera anopfuura makumi masere muzana emasekete akabatanidzwa, saka kazhinji uye semiconductor uye yakabatanidzwa yedunhu yakaenzana.

Yakabatanidzwa yedunhu, zvinoenderana nechikamu chechigadzirwa inonyanya kukamurwa kuita zvikamu zvina: microprocessor, memory, logic zvishandiso, simulator zvikamu. Nekudaro, nekuwedzera kuri kuramba kuchienderera mberi kwenzvimbo yekushandisa semiconductor zvishandiso, zviitiko zvakawanda zvakakosha zvinoda semiconductors kuti vakwanise kutevedzera kushandiswa kwekushisa kwakanyanya, mwaranzi yakasimba, simba rakakura uye mamwe nharaunda, usakuvadza, chizvarwa chekutanga uye chechipiri. semiconductor zvinhu hazvina simba, saka chizvarwa chechitatu che semiconductor zvinhu zvakavapo.

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Parizvino, iyo yakakura bhendi gap semiconductor zvinhu zvinomiririrwa nesilicon carbide(SiC), gallium nitride (GaN), zinc oxide (ZnO), dhaimondi, aluminium nitride (AlN) inogara mumusika wakakura nemabhenefiti makuru, pamwe chete anonzi chizvarwa chechitatu semiconductor zvinhu. Chizvarwa chechitatu chemidziyo yesemiconductor ine yakafara bhendi gap upamhi, iyo yakakwira yekuputsika kwemagetsi munda, kupisa kwemagetsi, yemagetsi saturated mwero uye kugona kwepamusoro kurwisa radiation, yakanyanya kukodzera kugadzira tembiricha yepamusoro, yakakwirira frequency, kuramba nemwaranzi uye yakakwirira simba zvishandiso. , inowanzozivikanwa seyakafara bandgap semiconductor zvinhu (inorambidzwa bhendi upamhi yakakura kupfuura 2.2 eV), inonziwo tembiricha yepamusoro iyo semiconductor zvinhu. Kubva pakutsvagisa kwazvino pane yechitatu-chizvarwa semiconductor zvinhu nemidziyo, silicon carbide uye gallium nitride semiconductor zvinhu zvakakura, uyesilicon carbide tekinorojindiyo yakanyanya kukura, nepo tsvagiridzo yezinc oxide, diamondi, aruminiyamu nitride uye zvimwe zvinhu zvichiri mudanho rekutanga.

Zvishandiso uye Zvinhu Zvazvo:

Silicon carbidezvinhu zvinowanzoshandiswa ceramic bhora mabhengi, mavharuvhu, semiconductor zvinhu, gyros, kuyera zviridzwa, aerospace uye mamwe minda, yava chinhu irreplaceable mundima dzakawanda maindasitiri.

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SiC imhando yechisikigo superlattice uye yakajairika homogeneous polytype. Kune anopfuura mazana maviri (ari kuzivikanwa parizvino) homotypic polytypic mhuri nekuda kwekusiyana kwekurongedza kutevedzana pakati peSi uye C diatomic layers, iyo inotungamira kune akasiyana makristasi zvimiro. Naizvozvo, SiC yakanyatsokodzera chizvarwa chitsva chechiedza emitting diode (LED) substrate material, yakakwirira simba zvemagetsi zvinhu.

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pfuma chaiyo

Kuoma kwepamusoro (3000kg / mm), kunogona kucheka ruby
High kupfeka resistance, yechipiri chete kune diamond
Thermal conductivity iri 3 nguva yakakwirira kupfuura iyo yeSi uye 8 ~ 10 nguva yakakwirira kupfuura iyo yeGaAs.
Kugadzikana kwekushisa kweSiC kwakakwirira uye hazvibviri kunyunguduka pamhepo yemhepo
Kushanda kwakanaka kwekupisa kupisa kwakakosha zvakanyanya kune yakakwirira-simba zvishandiso
 

 

makemikari pfuma

Kuramba kwakasimba kwecorrosion, inoshingirira kunenge chero ipi zvayo inozivikanwa inokuvadza patembiricha yekamuri
SiC pamusoro inoisa nyore oxidize kuumba SiO, nhete yakatsetseka, inogona kudzivirira kuwedzera kwayo oxidation, mukati Pamusoro pe1700 ℃, iyo oxide firimu inonyunguduka uye oxidize nekukurumidza
Iyo bandgap ye4H-SIC uye 6H-SIC ingangoita 3 nguva iyo yeSi uye 2 nguva iyo yeGaAs: Iyo yekuputsika yemagetsi munda intensity ihurongwa hwehukuru hwepamusoro kupfuura Si, uye electron drift velocity yakazara. Kaviri nehafu Si. Iyo bandgap ye4H-SIC yakakura kupfuura iyo ye6H-SIC

Nguva yekutumira: Aug-01-2022
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