Iyo Monocrystalline 8 Inch Silicon Wafer kubva kuVET Energy ndiyo inotungamira indasitiri mhinduro kune semiconductor uye yemagetsi mudziyo kugadzira. Inopa kuchena kwepamusoro uye chimiro chekristaro, aya mawaferi akanakira kushandiswa kwepamusoro-soro mune ese maphotovoltaic uye semiconductor maindasitiri. VET Energy inova nechokwadi chekuti wafer yega yega inogadziriswa zvine hungwaru kuti isangane nemazinga epamusoro, ichipa yakanakisa kufanana uye yakatsetseka yekumusoro kupera, izvo zvakakosha pakugadzirwa kwemagetsi epamberi.
Aya Monocrystalline 8 Inch Silicon Wafers anowirirana nehuwandu hwezvinhu, zvinosanganisira Si Wafer, SiC Substrate, SOI Wafer, SiN Substrate, uye inonyanya kukodzera Epi Wafer kukura. Yavo yepamusoro-soro yekupisa conductivity uye magetsi emagetsi anoita kuti vave sarudzo yakavimbika yekugadzirwa kwepamusoro-soro. Pamusoro pezvo, aya mawafer akagadzirwa kuti ashande zvisina musono nezvinhu zvakaita seGallium Oxide Ga2O3 uye AlN Wafer, ichipa huwandu hwakasiyana hwekushandisa kubva kumagetsi emagetsi kuenda kuRF zvishandiso. Iwo mawafer anokwanawo zvakakwana muCassette masisitimu epamusoro-vhoriyamu, otomatiki ekugadzira nharaunda.
VET Energy's chigadzirwa mutsara haina kuganhurirwa kune silicon wafers. Isu tinopawo huwandu hwakasiyana hwema semiconductor substrate zvinhu, zvinosanganisira SiC Substrate, SOI Wafer, SiN Substrate, Epi Wafer, nezvimwewo, pamwe neakafara bandgap semiconductor zvinhu zvakaita seGallium Oxide Ga2O3 uye AlN Wafer. Izvi zvigadzirwa zvinogona kusangana nezvinodiwa zvevatengi vakasiyana mumagetsi emagetsi, radio frequency, sensors uye mamwe minda.
VET Energy inopa vatengi neyakagadzirirwa wafer mhinduro. Tinogona kugadzirisa zvimedu zvine resistivity yakasiyana, okisijeni yemukati, ukobvu, nezvimwe zvinoenderana nezvinodiwa nevatengi. Uye zvakare, isu tinopawo nyanzvi yehunyanzvi rutsigiro uye mushure mekutengesa sevhisi kubatsira vatengi kugadzirisa matambudziko akasiyana akasangana panguva yekugadzira.
WAFERING SECIFICATIONS
*n-Pm=n-type Pm-Giredhi,n-Ps=n-type Ps-Giredhi,Sl=Semi-lnsulating
Item | 8-Inji | 6-Inji | 4-inch | ||
nP | n-Pm | n-Mapisarema | SI | SI | |
TTV(GBIR) | ≤6um | ≤6um | |||
Bow(GF3YFCD)-Absolute Value | ≤15μm | ≤15μm | ≤25μm | ≤15μm | |
Warp(GF3YFER) | ≤25μm | ≤25μm | ≤40μm | ≤25μm | |
LTV(SBIR) -10mmx10mm | <2μm | ||||
Wafer Edge | Beveling |
SURFACE FINISH
*n-Pm=n-type Pm-Giredhi,n-Ps=n-type Ps-Giredhi,Sl=Semi-lnsulating
Item | 8-Inji | 6-Inji | 4-inch | ||
nP | n-Pm | n-Mapisarema | SI | SI | |
Surface Finish | Kaviri divi Optical Polish, Si- Face CMP | ||||
SurfaceRoughness | (10um x 10um) Si-FaceRa≤0.2nm | (5umx5um) Si-Face Ra≤0.2nm | |||
Edge Chips | Hapana Inobvumidzwa (kureba nehupamhi≥0.5mm) | ||||
Indents | Hapana Inobvumirwa | ||||
Makwara (Si-Face) | Uk.≤5,Kuwedzera | Uk.≤5,Kuwedzera | Uk.≤5,Kuwedzera | ||
Mitswe | Hapana Inobvumirwa | ||||
Kusabatanidzwa kumucheto | 3mm |