gallium arsenide-phosphide epitaxial

Tsanangudzo Pfupi:

Gallium arsenide-phosphide epitaxial zvimiro, zvakafanana neyakagadzirwa zvimiro zve substrate ASP mhando (ET0.032.512TU), ye. kugadzirwa kwe planar red LED makristasi.

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Gallium arsenide-phosphide epitaxial zvimiro, zvakafanana neyakagadzirwa zvimiro zve substrate ASP mhando (ET0.032.512TU), ye. kugadzirwa kwe planar red LED makristasi.

Basic technical parameter
kune gallium arsenide-phosphide zvimiro

1,SubstrateGaAs
a. Conductivitytype	zvemagetsi
b. Resistivity, ohm-cm	0,008
c. Crystal-latticeorientation	(100)
d. Surface misoriental	(1−3)°

2. Epitaxial layer GaAs1-х Pх
a. Conductivitytype	zvemagetsi
b. Phosphorus yemukati mune yekuchinja layer	kubva х = 0 kusvika х ≈ 0,4
c. Phosphorus yemukati muchikamu chekugara kuumbwa	х ≈ 0,4
d. Carrier concentration, сm3	(0,2−3,0)·1017
e. Wavelength pahupamhi hwephotoluminescence spectrum, nm	645−673 nm
f. Wavelength pahupamhi hwe electroluminescence spectrum	650−675 nm
g. Constant layer thickness, micron	Kanenge 8 nm
h. Layerthickness (yakazara), micron	Anenge 30 nm

3 Ndiro ine epitaxial layer
a. Kutsauswa, micron	Kunyanya 100 um
b. Ukobvu, micron	360−600 um
c. Squarecentimeter	Zvinenge 6 cm2
d. Kunyanya kupenya kusimba (mushure me diffusionZn), cd/amp	Kanenge 0,05 cd/amp