1. Third-generation semiconductors
The first-generation semiconductor technology was developed based on semiconductor materials such as Si and Ge. It is the material basis for the development of ...
Silicon carbide (SiC) is a new compound semiconductor material. Silicon carbide has a large band gap (about 3 times silicon), high critical field strength (about 10 times silicon), high thermal con...
Graphite Bearing is made by Electro-Graphite, Carbon Graphite, Metal Graphite, and Resin-Bonded Graphit, Two types are incluided that are Radial Bearing and Axial Bearing.
The global Graphite Beari...
SiC has excellent physical and chemical properties, such as high melting point, high hardness, corrosion resistance and oxidation resistance. Especially in the range of 1800-2000 ℃, SiC has good ab...
The first generation of semiconductor materials is represented by traditional silicon (Si) and germanium (Ge), which are the basis for integrated circuit manufacturing. They are widely used in low-...