The basic process of SiC crystal growth is divided into sublimation and decomposition of raw materials at high temperature, transportation of gas phase substances under the action of temperature gr...
2. Epitaxial thin film growth
The substrate provides a physical support layer or conductive layer for Ga2O3 power devices. The next important layer is the channel layer or epitaxial layer used f...
First, the principle of mixing
By stirring the blades and the revolving frame to rotate each other, the mechanical suspension is generated and maintained, and the mass transfer between the liquid a...
1. Main processes of plasma enhanced chemical vapor deposition
Plasma enhanced chemical vapor deposition (PECVD) is a new technology for the growth of thin films by chemical reaction of gase...
1 Application and research progress of silicon carbide coating in carbon/carbon thermal field materials
1.1 Application and research progress in crucible preparation
In the single crystal thermal ...