SiC Coating/Coated Graphite Substrate/Tray for Semiconductor

Short Description:

VET Energy SiC Coated Graphite Susceptor for Epitaxial Growth is a high-performance product designed to provide consistent and reliable performance over an extended period. It has super good heat resistance and thermal uniformity, high purity, erosion resistance, making it the perfect solution for wafer processing applications.


Product Detail

Product Tags

SiC coating/coated of Graphite susceptor for Semiconductor
 
The SiC Coated Graphite Substrate is a highly durable and efficient solution designed to meet the rigorous demands of the semiconductor processing industry. Featuring a layer of high-purity silicon carbide (SiC) coating, this substrate delivers exceptional thermal stability, oxidation resistance, and prolonged service life, making it ideal for applications in MOCVD processes, graphite wafer carriers, and other high-temperature environments.

 Features: 
· Excellent Thermal Shock Resistance
· Excellent Physical Shock Resistance
· Excellent Chemical Resistance
· Super High Purity
· Availability in Complex Shape
·Usable under Oxidizing Atmosphere

Application:

3

Product Features and Advantages:

1. Superior Thermal Resistance: With a high-purity SiC coating, the substrate withstands extreme temperatures, ensuring consistent performance in demanding environments such as epitaxy and semiconductor fabrication.

2. Enhanced Durability: The SiC coated graphite components are designed to resist chemical corrosion and oxidation, increasing the substrate’s lifespan compared to standard graphite substrates.

3. Vitreous Coated Graphite: The unique vitreous structure of the SiC coating provides excellent surface hardness, minimizing wear and tear during high-temperature processing.

4. High Purity SiC Coating: Our substrate ensures minimal contamination in sensitive semiconductor processes, offering reliability for industries that require stringent material purity.

5. Wide Market Application: The SiC coated graphite susceptor market continues to grow as demand for advanced SiC coated products in semiconductor manufacturing increases, positioning this substrate as a key player in both the graphite wafer carrier market and the silicon carbide coated graphite trays market.

Typical Properties of Base Graphite Material:

Apparent Density: 1.85 g/cm3
Electrical Resistivity: 11 μΩm
Flexural Strenth: 49 MPa (500kgf/cm2)
Shore Hardness: 58
Ash: <5ppm
Thermal Conductivity: 116 W/mK (100 kcal/mhr-℃)

 

CVD SiC薄膜基本物理性能

Basic physical properties of CVD SiC coating

性质 / Property

典型数值 / Typical Value

晶体结构 / Crystal Structure

FCC β phase 多晶,主要为(111)取向

密度 / Density

3.21 g/cm³

硬度 / Hardness

2500 维氏硬度(500g load)

晶粒大小 / Grain SiZe

2~10μm

纯度 / Chemical Purity

99.99995%

热容 / Heat Capacity

640 J·kg-1·K-1

升华温度 / Sublimation Temperature

2700℃

抗弯强度 / Flexural Strength

415 MPa RT 4-point

杨氏模量 / Young' s Modulus

430 Gpa 4pt bend, 1300℃

导热系数 / Thermal Conductivity

300W·m-1·K-1

热膨胀系数 / Thermal Expansion(CTE)

4.5×10-6K-1

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VET Energy is the real manufacturer of customized graphite and silicon carbide products with different coatings like SiC coating, TaC coating, glassy carbon coating, pyrolytic carbon coating, etc., can supply various customized parts for semiconductor and photovoltaic industry.

Our technical team comes from top domestic research institutions, can provide more professional material solutions for you.

We continuously develop advanced processes to provide more advanced materials, and have worked out an exclusive patented technology, which can make the bonding between the coating and the substrate tighter and less prone to detachment.

Warmly welcome you to visit our factory, let's have further discussion!

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