SiC coating/coated of Graphite substrate for Semiconductor， Graphite Trays，Sic Graphite epitaxy susceptors,
Carbon supplies susceptors, EPITAXY AND MOCVD, epitaxy susceptors, Graphite Trays, Wafer Susceptors,

CVD-SiC coating has the characteristics of uniform structure, compact material, high temperature resistance, oxidation resistance, high purity, acid&alkali resistance and organic reagent, with stable physical and chemical properties.

 Compared with high-purity graphite materials, graphite begins to oxidize at 400C, which will cause a loss of powder due to oxidation, resulting in environmental pollution to peripheral devices and vacuum chambers, and increase impurities of high-purity environment.

 However, SiC coating can maintain physical and chemical stability at 1600 degrees, It is widely used in modern industry, especially in semiconductor industry.

  Our company provides SiC coating process services by CVD method on the surface of graphite, ceramics and other materials, so that special gases containing carbon and silicon react at high temperature to obtain high purity SiC molecules, molecules deposited on the surface of the coated materials, forming SIC protective layer. The SIC formed is firmly bonded to the graphite base, giving the graphite base special properties, thus making the surface of the graphite compact, Porosity-free, high temperature resistance, corrosion resistance and oxidation resistance.

Main features:

1. High temperature oxidation resistance:

the oxidation resistance is still very good when the temperature is as high as 1700 C.

2. High purity: made by chemical vapor deposition under high temperature chlorination condition.

3. Erosion resistance: high hardness, compact surface, fine particles.

4. Corrosion resistance: acid, alkali, salt and organic reagents.

Main Specifications of CVD-SIC Coatings:

Supply Ability:

10000 Piece/Pieces per Month
Packaging & Delivery:
Packing:Standard & Strong Packing
Poly bag + Box + Carton + Pallet
Port:
Ningbo/Shenzhen/Shanghai
Lead Time: