Silicon Carbide Coated Graphite Substrate for Semiconductor, MOCVD Susceptor

Short Description:

VET Energy SiC Coated Susceptor is a high-performance product designed to provide consistent and reliable performance over an extended period. It has super good heat resistance and thermal uniformity, high purity, erosion resistance, making it the perfect solution for wafer processing applications.

Place of Origin: Zhejiang, China (Mainland)

Model Number: Model Number:

Chemical Composition: SiC coated graphite

Flexural strength: 470Mpa

Thermal conductivity: 300 W/mK

Quality: Perfect

Function: CVD-SiC

Application: Semiconductor /Photovoltaic

Density: 3.21 g/cc

Thermal expansion: 4 10-6/K

Ash: <5ppm

Sample: Avaliable

HS Code: 6903100000

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VET Energy SiC Coated Susceptor is a high-performance solution meticulously crafted to deliver reliable, consistent performance across an extended lifespan, meeting the rigorous demands of semiconductor manufacturing. Featuring exceptional heat resistance, superior thermal uniformity, and high purity, this product is ideal for MOCVD wafer carriers and other wafer processing applications requiring stability and precision. Its robust erosion resistance makes it a premium choice for environments where durability and chemical resilience are essential.

Our SiC Coated Graphite Susceptor stands as a critical component in the semiconductor manufacturing process, leveraging VET Energy’s exclusive patented technology to achieve extremely high purity, superior coating uniformity, and remarkable thermal stability. The coating enhances the graphite substrate with high chemical resistance and a significantly extended service life. VET Energy’s dedication to quality has resulted in a SiC-coated susceptor that meets the evolving needs of the graphite wafer carrier market, setting a high standard for SiC-coated graphite susceptors used in MOCVD processes.

Key Features of SiC Coated Susceptors:

1. High-Temperature Oxidation Resistance: Withstand temperatures up to 1700℃, making it suitable for extreme processing conditions.

2. High Purity and Thermal Uniformity: Ensures consistent results, vital for MOCVD susceptors and other precision applications.

3. Excellent Corrosion Resistance: Resilient to acid, alkali, salt, and various organic reagents.

4. Enhanced Surface Hardness: Compact surface with fine particles that provide higher durability and longevity.

5. Extended Service Life: Engineered for sustained performance, outperforming standard silicon carbide-coated susceptors in harsh processing environments.

As a leading manufacturer, VET Energy specializes in customized graphite and silicon carbide products with various coating options, including SiC coating, TaC coating, glassy carbon coating, and pyrolytic carbon coating. We proudly serve the semiconductor and photovoltaic industries, delivering silicon carbide coated graphite susceptors that meet specific operational demands.

Our technical team, with experience from top domestic research institutions, is dedicated to advancing material solutions for the evolving needs of the SiC-coated graphite susceptor market. Through our patented process, VET Energy has developed unique technology that significantly improves the bond strength between the silicon carbide coating and the substrate, reducing the risk of detachment and enhancing long-term reliability.

Applications and Advantages in Semiconductor Processing

The SiC coating for MOCVD enables graphite susceptor components to maintain integrity under high-temperature and corrosive environments, which is vital for precision semiconductor production. These SiC-coated graphite components are especially valued in processes requiring silicon carbide-coated susceptors for graphite wafer carriers, which demand high thermal stability, purity, and resistance to chemical erosion.

With our advanced silicon carbide coating techniques, VET Energy continues to support the graphite wafer carrier market by delivering customized, high-performance SiC-coated graphite susceptors that address industry-specific challenges, from MOCVD processes to high-purity applications in the semiconductor field.