SiC coating graphite MOCVD Wafer carriers, Graphite Susceptors for SiC Epitaxy

Short Description:

SiC coating of Graphite substrate for Semiconductor applications produces a part with superior purity and resistance to oxidizing atmosphere. CVD SiC or CVI SiC is applied to Graphite of simple or complex design parts. Coating can be applied in varying thicknesses and to very large parts.


  • Place of Origin: Zhejiang, China (Mainland)
  • Model Number: Model Number:
  • Chemical Composition: SiC coated graphite
  • Flexural strength: 470Mpa
  • Thermal conductivity: 300 W/mK
  • Quality: Perfect
  • Function: CVD-SiC
  • Application: Semiconductor /Photovoltaic
  • Density: 3.21 g/cc
  • Thermal expansion: 4 10-6/K
  • Ash: <5ppm
  • Sample: Avaliable
  • HS Code: 6903100000
  • Product Detail

    Product Tags

    SiC coating graphite MOCVD Wafer carriers, Graphite Susceptors for SiC Epitaxy,
    Carbon supplies susceptors, Graphite epitaxy susceptors, Graphite support substrates, MOCVD Susceptor, SiC Epitaxy, Wafer Susceptors,

    Product Description

    Special advantages of our SiC-coated graphite susceptors include extremely high purity, homogenous coating and an excellent service life. They also have high chemical resistance and thermal stability properties.

    SiC coating of Graphite substrate for Semiconductor applications produces a part with superior purity and resistance to oxidizing atmosphere.
    CVD SiC or CVI SiC is applied to Graphite of simple or complex design parts. Coating can be applied in varying thicknesses and to very large parts.

    SiC coating/coated MOCVD Susceptor

    Features:
    · Excellent Thermal Shock Resistance
    · Excellent Physical Shock Resistance
    · Excellent Chemical Resistance
    · Super High Purity
    · Availability in Complex Shape
    · Usable under Oxidizing Atmosphere

     Application:

    2

     

    Typical Properties of Base Graphite Material:

    Apparent Density: 1.85 g/cm3
    Electrical Resistivity: 11 μΩm
    Flexural Strenth: 49 MPa (500kgf/cm2)
    Shore Hardness: 58
    Ash: <5ppm
    Thermal Conductivity: 116 W/mK (100 kcal/mhr-℃)

    Carbon supplies susceptors and graphite components for all current epitaxy reactors. Our portfolio includes barrel susceptors for applied and LPE units, pancake susceptors for LPE, CSD, and Gemini units, and single-wafer susceptors for applied and ASM units.By combining strong partnerships with leading OEMs, materials expertise and manufacturing know-how, SGL offers the optimal design for your application.

     


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