1. SiC crystal growth technology route
PVT (sublimation method),
HTCVD (high temperature CVD),
LPE (liquid phase method)
are three common SiC crystal growth methods;
The most recognized meth...
Silicon carbide (SiC) semiconductor material is the most mature one among the wide band gap semiconductors developed. SiC semiconductor materials have great application potential in high temperatur...
High-purity graphite components are crucial to processes in the semiconductor, LED and solar industry. Our offering ranges from graphite consumables for crystal growing hot zones (heaters, crucible...
The global Silicon Carbide Coating market study presents an all in all compilation of the historical, current and future outlook of the market as well as the factors responsible for such a growth. ...
What are the excellent properties of expanded graphite
1、Mechanical function:
1.1 High compressibility and resilience: for expanded graphite products, there are still many closed small open space...
As shown in Fig. 3, there are three dominant techniques aiming to provide SiC single crystal with high quality and effciency: liquid phase epitaxy (LPE), physical vapor transport (PVT), and high-te...