Silicon Carbide coating wafer base

Ibisobanuro bigufi:


  • Aho byaturutse:Zhejiang, Ubushinwa (Mainland)
  • Umubare w'icyitegererezo:Ubwato 3002
  • Ibigize imiti:SiC yashushanyije
  • Kurwanya amashanyarazi:11 μΩm
  • Gukomera ku nkombe: 58
  • Amashanyarazi:116 W / mK (100 kcal / mhr- ℃)
  • Icyitegererezo:Birashoboka
  • Kode ya HS:6903100000
  • Izina ry'ikirango:VET
  • Ubucucike:1,85 g / cm3
  • Imbaraga zoroshye:49 MPa
  • Ivu: <5ppm
  • Ubwiza:Biratunganye
  • Gusaba:Semiconductor / Photovoltaic
  • Ibicuruzwa birambuye

    Ibicuruzwa

    Silicon Carbide gutwikirawafer base,
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    Ibisobanuro ku bicuruzwa

    SiCgutwikiraya GraphitesubstrateKuriAmashanyaraziPorogaramu itanga igice gifite isuku irenze kandi irwanya okiside ikirere.
    CVDSiC cyangwa CVI SiC ikoreshwa kuri Graphite yibice byoroshye cyangwa bigoye gushushanya.Ipitingi irashobora gukoreshwa mubwinshi butandukanye no mubice binini cyane.

    SiC gutwikira / gutwikiriye MOCVD Susceptor

    Ibiranga:
    · Kurwanya Ubushuhe buhebuje
    · Kurwanya umubiri mwiza cyane
    · Kurwanya imiti nziza cyane
    · Ubuziranenge buhebuje
    · Kuboneka muburyo bugoye
    · Irakoreshwa munsi ya Oxidizing Atmosphere

    Ibintu bisanzwe bya Base Graphite Ibikoresho:

    IkigaragaraUbucucike: 1,85 g / cm3
    Kurwanya amashanyarazi: 11 μΩm
    Icyerekezo cyoroshye: 49 MPa (500kgf / cm2)
    Gukomera ku nkombe: 58
    Ivu: <5ppm
    Amashanyarazi: 116 W / mK (100 kcal / mhr-)

    Amakuru yisosiyete

    111

    Ibikoresho byo mu ruganda

    222

    Ububiko

    333

    Impamyabumenyi

    Impamyabumenyi22

    faqs

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    Nibyo, turasaba amategeko mpuzamahanga yose kugira umubare ntarengwa wateganijwe.
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