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SiC itwikiriwe na Graphite substrate ya Semiconductor, Carbide ya Silicon, Sceptor ya MOCVD

Igicapo cya SiC gitwikiriwe na Graphite substrate ya Semiconductor, Silicon carbide coating, Susceptor ya MOCVD Ikiranga
  • SiC itwikiriwe na Graphite substrate ya Semiconductor, Carbide ya Silicon, Sceptor ya MOCVD
  • SiC itwikiriwe na Graphite substrate ya Semiconductor, Carbide ya Silicon, Sceptor ya MOCVD
  • SiC itwikiriwe na Graphite substrate ya Semiconductor, Carbide ya Silicon, Sceptor ya MOCVD
  • SiC itwikiriwe na Graphite substrate ya Semiconductor, Carbide ya Silicon, Sceptor ya MOCVD
  • SiC itwikiriwe na Graphite substrate ya Semiconductor, Carbide ya Silicon, Sceptor ya MOCVD

Ibisobanuro bigufi:

SiC itwikiriye Graphite substrate ya porogaramu ya Semiconductor itanga igice gifite isuku irenze kandi irwanya umwuka wa okiside.CVD SiC cyangwa CVI SiC ikoreshwa kuri Graphite yibice byoroshye cyangwa bigoye gushushanya.Ipitingi irashobora gukoreshwa mubwinshi butandukanye no mubice binini cyane.


  • Aho byaturutse:Zhejiang, Ubushinwa (Mainland)
  • Umubare w'icyitegererezo:Umubare w'icyitegererezo:
  • Ibigize imiti:SiC yashushanyije
  • Imbaraga zoroshye:470Mpa
  • Amashanyarazi:300 W / mK
  • Ubwiza:Biratunganye
  • Igikorwa:CVD-SiC
  • Gusaba:Semiconductor / Photovoltaic
  • Ubucucike:3.21 g / cc
  • Kwiyongera k'ubushyuhe:4 10-6 / K.
  • Ivu: <5ppm
  • Icyitegererezo:Birashoboka
  • Kode ya HS:6903100000
    • Kuramo nka PDF

    Ibicuruzwa birambuye

    Ibicuruzwa

    SiC itwikiriye Graphite substrate ya Semiconductor, Carbide ya Silicon,MOCVD,
    GaN epitaxy kuri silicon, IC monocrystalline silicon epitaxy, LED chip epitaxy, MOCVD, Silicon Carbide Coating, UV LED chip epitaxy,

    Ibisobanuro ku bicuruzwa

    SiC itwikiriye Graphite substrate ya porogaramu ya Semiconductor itanga igice gifite isuku irenze kandi irwanya umwuka wa okiside.
    CVD SiC cyangwa CVI SiC ikoreshwa kuri Graphite yibice byoroshye cyangwa bigoye gushushanya.Ipitingi irashobora gukoreshwa mubwinshi butandukanye no mubice binini cyane.

    SiC gutwikira / gutwikiriye MOCVD Susceptor

    Ibiranga:
    · Kurwanya Ubushuhe buhebuje
    · Kurwanya umubiri mwiza cyane
    · Kurwanya imiti nziza cyane
    · Ubuziranenge buhebuje
    · Kuboneka muburyo bugoye
    · Irakoreshwa munsi ya Oxidizing Atmosphere

     

    Ibintu bisanzwe bya Base Graphite Ibikoresho:

    Ubucucike bugaragara: 1,85 g / cm3
    Kurwanya amashanyarazi: 11 μΩm
    Icyerekezo cyoroshye: 49 MPa (500kgf / cm2)
    Gukomera ku nkombe: 58
    Ivu: <5ppm
    Amashanyarazi: 116 W / mK (100 kcal / mhr- ℃)

    SiC gutwikira / gutwikiriye MOCVD SusceptorSiC gutwikira / gutwikiriye MOCVD SusceptorSiC gutwikira / gutwikiriye MOCVD SusceptorSiC gutwikira / gutwikiriye MOCVD Susceptor

    Ibicuruzwa byinshi

    SiC gutwikira / gutwikiriye MOCVD Susceptor

    Amakuru yisosiyete

    111

    Ibikoresho byo mu ruganda

    222

    Ububiko

    333

    Impamyabumenyi

    Impamyabumenyi22

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