SiC Coating Carrier Kuri RTP / RTA nikintu cyingenzi gikoreshwa mubikorwa byo gukora semiconductor byitwa Rapid Thermal Processing & Annealing, dukoresha tekinoroji yacu yatanzwe kugirango dukore carbide ya silicon ifite isuku ryinshi cyane, uburinganire bwiza hamwe nubuzima bwiza bwa serivisi, nkuko kimwe no kurwanya imiti myinshi hamwe nubushyuhe bwumuriro.
Ibiranga ibicuruzwa byacu:
1. Ubushyuhe bwo hejuru bwa okiside irwanya 1700 ℃.
2. Isuku ryinshi nuburinganire bwumuriro
3. Kurwanya ruswa nziza: aside, alkali, umunyu na reagent.
4. Gukomera cyane, hejuru yuzuye, ibice byiza.
5. Kuramba kumurimo muremure kandi biramba
| CVD SiC薄膜基本物理性能 Ibyingenzi bifatika bya CVD SiCgutwikira | |
| 性质 / Umutungo | 典型数值 / Agaciro gasanzwe |
| 晶体结构 / Imiterere ya Crystal | FCC β icyiciro多晶，主要为（111 ）取向 |
| 密度 Ubucucike | 3.21 g / cm³ |
| 硬度 / Gukomera | 2500 维氏硬度（ 500g umutwaro） |
| 晶粒大小 / Ibinyampeke SiZe | 2 ~ 10 mm |
| 纯度 / Ubuziranenge bwa Shimi | 99.99995% |
| 热容 / Ubushyuhe | 640 J · kg-1· K.-1 |
| 升华温度 / Ubushyuhe bwo hejuru | 2700 ℃ |
| 抗弯强度 / Imbaraga zoroshye | 415 MPa RT amanota 4 |
| 杨氏模量 / Modulus | 430 Gpa 4pt yunamye, 1300 ℃ |
| 导热系数 / ThermalImyitwarire | 300W · m-1· K.-1 |
| 热膨胀系数 Kwagura Ubushyuhe (CTE) | 4.5 × 10-6K-1 |
VET Ingufu nukuri gukora ibicuruzwa byabugenewe byabugenewe bya grafite na silicon karbide hamwe nububiko butandukanye nka SiC coating, TaC coating, carbone carbone coating, pyrolytic carbone coating, nibindi, birashobora gutanga ibice bitandukanye byabigenewe kubice bya semiconductor ninganda zifotora.
Itsinda ryacu rya tekinike rituruka mubigo byubushakashatsi bwo murugo, birashobora kuguha ibisubizo byumwuga kubwawe.
Dukomeje guteza imbere inzira ziterambere kugirango dutange ibikoresho byinshi byateye imbere, kandi twakoze tekinoroji yihariye yemewe, ishobora gutuma isano iri hagati yikingirizo na substrate ikomera kandi idakunda gutandukana.
Murakaza neza cyane gusura uruganda rwacu, reka tuganire kubindi biganiro!
