Umwuga w'Ubushinwa Ubushinwa Sic Ubwato Bwitwaza Silicon Wafers Mubushuhe Bwinshi Bwinshi Diffusion Coating Furnace Tube

Ibisobanuro bigufi:


Ibicuruzwa birambuye

Ibicuruzwa

Imishinga ikungahaye bidasanzwe mubuyobozi hamwe numuntu kuri 1 ya serivise itanga akamaro gakomeye mu itumanaho ryumuryango no kumva neza ibyo witeze kubushinwa Ubushinwa Sic Boat Ubwikorezi bwa Silicon Wafers muri Temperature High Diffusion Coating Furnace Tube, Intego yacu yibanze burigihe gutondekanya nkikirango cyo hejuru kandi no kuyobora nkumupayiniya murwego rwacu. Twizeye neza ko uburambe butanga umusaruro mugukora ibikoresho bizabona ikizere cyabakiriya, Twifurije gufatanya no gufatanya gukora igihe kirekire cyiza hamwe nawe!
Imishinga ikungahaye bidasanzwe mubuyobozi hamwe numuntu kuri 1 ya serivise itanga akamaro gakomeye ko gutumanaho mumashyirahamwe no kumva byoroshye ibyo witezehoUbushinwa Bwitwaza Silicon Wafers, Polycrystallie Silicon Wafer, Ikaze mubibazo byawe byose nibibazo byibicuruzwa byacu. Dutegereje gushiraho umubano muremure wubucuruzi nawe mugihe cya vuba. Twandikire uyu munsi. Turi abafatanyabikorwa ba mbere bahuza ibyo ukeneye!
IbicuruzwaDKwiyandikisha

Silicon carbide Wafer Ubwato bukoreshwa cyane nka wafer mugihe cyo gukwirakwiza ubushyuhe bwinshi.

Ibyiza:

Kurwanya ubushyuhe bwinshi:gukoresha bisanzwe kuri 1800 ℃

Amashanyarazi menshi:bihwanye nibikoresho bya grafite

Gukomera cyane:gukomera kumwanya wa kabiri nyuma ya diyama, boron nitride

Kurwanya ruswa:acide ikomeye na alkali nta ruswa ifite kuri yo, kurwanya ruswa biruta karbide ya tungsten na alumina

Uburemere bworoshye:ubucucike buke, hafi ya aluminium

Nta guhindura ibintu: coefficient nkeya yo kwagura ubushyuhe

Kurwanya ubushyuhe:irashobora kwihanganira impinduka zikabije zubushyuhe, kurwanya ihungabana ryumuriro, kandi ifite imikorere ihamye

 

Ibintu bifatika bya SiC

Umutungo Agaciro Uburyo
Ubucucike 3.21 g / cc Kurohama-kureremba hamwe nubunini
Ubushyuhe bwihariye 0,66 J / g ° K. Flash flash
Imbaraga zoroshye 450 MPa 560 MPa Ingingo 4 yunamye, RT4 igoramye, 1300 °
Gukomera kuvunika 2.94 MPa m1 / 2 Microindentation
Gukomera 2800 Vicker, umutwaro wa 500g
Modulus Yumusore Modulus 450 GPa430 GPa 4 pt yunamye, RT4 yunamye, 1300 ° C.
Ingano y'ibinyampeke 2 - 10 µm SEM

 

Ubushyuhe Bwiza bwa SiC

Amashanyarazi 250 W / m ° K. Uburyo bwa Laser flash, RT
Kwagura Ubushyuhe (CTE) 4.5 x 10-6 ° K. Icyumba cyicyumba kugeza 950 ° C, dilatometero silika

 

 

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