Imishinga ikungahaye bidasanzwe mubuyobozi hamwe numuntu kuri 1 ya serivise itanga akamaro gakomeye mu itumanaho ryumuryango no kumva neza ibyo witeze kubushinwa Ubushinwa Sic Boat Ubwikorezi bwa Silicon Wafers muri Temperature High Diffusion Coating Furnace Tube, Intego yacu yibanze burigihe gutondekanya nkikirango cyo hejuru kandi no kuyobora nkumupayiniya murwego rwacu. Twizeye neza ko uburambe butanga umusaruro mugukora ibikoresho bizabona ikizere cyabakiriya, Twifurije gufatanya no gufatanya gukora igihe kirekire cyiza hamwe nawe!
Imishinga ikungahaye bidasanzwe mubuyobozi hamwe numuntu kuri 1 ya serivise itanga akamaro gakomeye ko gutumanaho mumashyirahamwe no kumva byoroshye ibyo witezehoUbushinwa Bwitwaza Silicon Wafers, Polycrystallie Silicon Wafer, Ikaze mubibazo byawe byose nibibazo byibicuruzwa byacu. Dutegereje gushiraho umubano muremure wubucuruzi nawe mugihe cya vuba. Twandikire uyu munsi. Turi abafatanyabikorwa ba mbere bahuza ibyo ukeneye!
IbicuruzwaDKwiyandikisha
Silicon carbide Wafer Ubwato bukoreshwa cyane nka wafer mugihe cyo gukwirakwiza ubushyuhe bwinshi.
Ibyiza:
Kurwanya ubushyuhe bwinshi:gukoresha bisanzwe kuri 1800 ℃
Amashanyarazi menshi:bihwanye nibikoresho bya grafite
Gukomera cyane:gukomera kumwanya wa kabiri nyuma ya diyama, nitride ya boron
Kurwanya ruswa:acide ikomeye na alkali nta ruswa ifite kuri yo, kurwanya ruswa biruta karbide ya tungsten na alumina
Uburemere bworoshye:ubucucike buke, hafi ya aluminium
Nta guhindura ibintu: coefficient nkeya yo kwagura ubushyuhe
Kurwanya ubushyuhe:irashobora kwihanganira impinduka zikabije zubushyuhe, kurwanya ihungabana ryumuriro, kandi ifite imikorere ihamye
Ibintu bifatika bya SiC
Umutungo | Agaciro | Uburyo |
Ubucucike | 3.21 g / cc | Kurohama-kureremba hamwe nubunini |
Ubushyuhe bwihariye | 0,66 J / g ° K. | Flash flash |
Imbaraga zoroshye | 450 MPa 560 MPa | Ingingo 4 yunamye, RT4 igoramye, 1300 ° |
Gukomera kuvunika | 2.94 MPa m1 / 2 | Microindentation |
Gukomera | 2800 | Vicker, umutwaro wa 500g |
Modulus Yumusore Modulus | 450 GPa430 GPa | 4 pt yunamye, RT4 yunamye, 1300 ° C. |
Ingano y'ibinyampeke | 2 - 10 µm | SEM |
Ubushyuhe Bwiza bwa SiC
Amashanyarazi | 250 W / m ° K. | Uburyo bwa Laser flash, RT |
Kwagura Ubushyuhe (CTE) | 4.5 x 10-6 ° K. | Icyumba cyicyumba kugeza 950 ° C, dilatometero silika |