SiC ikuramo ibikoresho bya LED epitaxial wafer ikura, SiC Coated Graphite Carriers

Ibice byinshi byera bya grafite nibyingenzi kuriinzira muri semiconductor, LED ninganda zizuba. Ituro ryacu ritangirira kumikoreshereze ya grafitike ya kristu ikura ahantu hashyushye (ubushyuhe, suseptors zikomeye, insulasiyo), kugeza kuri grafitike yuzuye yibikoresho byo gutunganya wafer, nka silicon karbide yometse kuri grafitike ya Epitaxy cyangwa MOCVD. Aha niho grafite yihariye ya grafite ije gukinirwa: isite ya grafitike isostatike ningirakamaro mugukora ibice bya semiconductor compound.Ibyo bikorerwa muri "zone ishyushye" munsi yubushyuhe bukabije mugihe bita epitaxy, cyangwa MOCVD. Umwikorezi uzunguruka kuri wafers yometse kuri reaktor, igizwe na silicon karbide-isize grafite isostatic. Gusa iyi grafite yuzuye, homogeneous grafite yujuje ibisabwa murwego rwo gutwikira.

Twe ihame ryibanze rya LED epitaxial wafer gukura ni: kuri substrate (cyane cyane safiro, SiC na Si) yashyutswe ku bushyuhe bukwiye, ibikoresho bya gaze InGaAlP bijyanwa hejuru yubutaka muburyo bugenzurwa kugirango bikure firime imwe ya kristu. Kugeza ubu, tekinoroji yo gukura ya LED epitaxial wafer ikoresha cyane cyane imyuka ya chimique yamashanyarazi.
LED epitaxial substrate ibikoreshoni umusingi witerambere ryikoranabuhanga ryinganda zitanga urumuri. Ibikoresho bitandukanye bya substrate bikenera tekinoroji ya LED epitaxial wafer yo gukura, tekinoroji yo gutunganya chip hamwe nubuhanga bwo gupakira ibikoresho. Ibikoresho bya substrate bigena inzira yiterambere rya tekinoroji ya semiconductor.

Ibiranga LED epitaxial wafer substrate ibikoresho byatoranijwe:

1. Ibikoresho bya epitaxial bifite imiterere imwe cyangwa isa na kristu yubatswe hamwe na substrate, utuzu duto duhoraho tudahuye, kristu nziza hamwe nubucucike buke

2. Ibiranga isura nziza, bifasha nucleation yibikoresho bya epitaxial hamwe no gukomera gukomeye

3. Ifite imiti ihamye kandi ntabwo yoroshye kubora no kubora mubushyuhe nikirere cyo gukura kwa epitaxial

4. Imikorere myiza yubushyuhe, harimo nubushyuhe bwiza bwumuriro no kudahuza ubushyuhe buke

5. Umuyoboro mwiza, urashobora gukorwa muburyo bwo hejuru no hepfo 6, imikorere myiza ya optique, kandi urumuri rutangwa nigikoresho cyahimbwe ntirwakirwa neza na substrate

7. Ibikoresho byiza byubukanishi no gutunganya byoroshye ibikoresho, harimo kunanura, gusya no gukata

8. Igiciro gito.

9. Ingano nini. Mubisanzwe, diameter ntishobora kuba munsi ya santimetero 2.

10. Biroroshye kubona imiterere isanzwe (keretse niba hari ibindi bisabwa bidasanzwe), kandi imiterere ya substrate isa nu mwobo wibikoresho bya epitaxial ntabwo byoroshye gukora amashanyarazi adasanzwe, kugirango bigire ingaruka kumiterere ya epitaxial.

11. Hashingiwe ku kutagira ingaruka ku bwiza bwa epitaxial, imashini ya substrate igomba kuba yujuje ibyangombwa bisabwa nyuma yo gutunganya chip no gutunganya ibicuruzwa bishoboka.

Biragoye cyane guhitamo substrate kugirango ihuze ibintu cumi na kimwe byavuzwe haruguru icyarimwe. Kubwibyo, kuri ubu, turashobora gusa guhuza na R & D hamwe nogukora ibikoresho bya semiconductor bitanga urumuri kumasoko atandukanye binyuze muguhindura ikoranabuhanga ryikura rya epitaxial no guhindura tekinoroji yo gutunganya ibikoresho. Hano hari ibikoresho byinshi byubushakashatsi bwa gallium nitride, ariko hariho substrate ebyiri gusa zishobora gukoreshwa mubikorwa, aribyo safiro Al2O3 na karbide ya siliconSiC.