MOCVD Substrate Ubushyuhe, Ibikoresho byo gushyushya MOCVD

Ibisobanuro bigufi:

Igishushanyo mbonera

Ibyiza: Kurwanya ubushyuhe bwinshi

Gusaba: MOCVD / Itanura rya Vacuum / Zone ishyushye

Ubucucike bwinshi: 1.68-1.91g / cm3

Imbaraga zoroshye: 30-46Mpa

Kurwanya: 7-12μΩm

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Ibicuruzwa birambuye

Ibicuruzwa

MOCVD Substrate Heater, Ibikoresho byo Gushyushya MOCVD,
igishushanyo mbonera, Graphite Semiconductor, umushyushya, MOCVD Substrate Heater,

MOCVD Substrate Ubushyuhe, Ibikoresho byo gushyushya MOCVD

Igishushanyoumushyushya:
Uwitekaigishushanyo mboneraibice bikoreshwa mu itanura ryubushyuhe bwo hejuru hamwe nubushyuhe bwageze kuri dogere 2200 mubidukikije bya vacuum na dogere 3000 murwego rwa gaze ya gaze kandi yashizwemo.
Ibyingenzi byingenzi byaigishushanyo mbonera:
1. Guhuza imiterere yubushyuhe.
2. Umuyoboro mwiza w'amashanyarazi n'umutwaro mwinshi w'amashanyarazi.
3. Kurwanya ruswa.
4. kutaboneka.
5. Ubuziranenge bwimiti.
6. Imbaraga zikomeye.
Ibyiza ni ingufu zikoresha ingufu, agaciro gakomeye no kubungabunga bike.
Turashobora kubyara anti-okiside hamwe nigihe kirekire cyo gushushanya grafite ingirakamaro, ibishushanyo mbonera hamwe nibice byose bishyushya.
Ibipimo nyamukuru byubushyuhe bwa grafite:

Ibisobanuro bya tekiniki	VET-M3
Ubucucike bwinshi (g / cm3)	851.85
Ibirimo ivu (PPM)	00500
Gukomera ku nkombe	≥45
Kurwanya Byihariye (μ.Ω.m)	≤12
Imbaraga zoroshye (Mpa)	≥40
Imbaraga Zikomeretsa (Mpa)	≥70
Icyiza. Ingano y'ibinyampeke (μm)	≤43
Coefficient yo Kwagura Ubushyuhe Mm / ° C.	≤4.4 * 10-6

Ubushyuhe bwa Graphite ku itanura ryamashanyarazi bufite imiterere yo kurwanya ubushyuhe, kurwanya okiside, gukoresha amashanyarazi neza hamwe nubukanishi bwiza. Turashobora gukora imashini zitandukanye zishyushya grafite dukurikije igishushanyo cyabakiriya.