Ikarita ya Etch

Ibisobanuro bigufi:

Aho byaturutse:Ubushinwa

Imiterere ya Crystal:Icyiciro cya FCCβ

Ubucucike:3.21 g / cm;

Gukomera:2500 Vickers;

Ingano y'ibinyampeke:2 ~ 10 mm;

Ubuziranenge bwa Shimi:99,99995%;

Ubushobozi bwo gushyushya:640J · kg-1 · K-1;

Ubushyuhe bwa Sublimation:2700 ℃;

Imbaraga zidasanzwe:415 Mpa (RT 4-Ingingo);

Umusore Modulus:430 Gpa (4pt yunamye, 1300 ℃);

Kwagura Ubushyuhe (CTE):4.5 10-6K-1;

Amashanyarazi:300 （W / MK）;

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Ibicuruzwa birambuye

Ibicuruzwa

Ibisobanuro ku bicuruzwa

Isosiyete yacu itanga serivise zo gutunganya SiC hakoreshejwe uburyo bwa CVD hejuru ya grafite, ceramique nibindi bikoresho, kugirango imyuka idasanzwe irimo karubone na silikoni ikora ubushyuhe bwinshi kugirango ibone molekile nziza ya SiC, molekile zashyizwe hejuru yibikoresho bisize, gukora urwego rwo kurinda SIC.

Ibyingenzi byingenzi:

1. Kurwanya ubushyuhe bukabije bwa okiside:

kurwanya okiside biracyari byiza cyane mugihe ubushyuhe buri hejuru ya 1600 C.

2. Isuku ryinshi: bikozwe nubumara bwa chimique munsi yubushyuhe bwo hejuru bwa chlorine.

3. Kurwanya isuri: gukomera kwinshi, hejuru yuzuye, ibice byiza.

4. Kurwanya ruswa: aside, alkali, umunyu na reagent.

Ibyingenzi byingenzi bya CVD-SIC

Ibiranga SiC-CVD
Imiterere ya Crystal	FCC β icyiciro
Ubucucike	g / cm ³	3.21
Gukomera	Vickers gukomera	2500
Ingano y'ibinyampeke	μm	2 ~ 10
Ubuziranenge bwa Shimi	%	99.99995
Ubushyuhe	J · kg-1 · K-1	640
Ubushyuhe bwo hejuru	℃	2700
Imbaraga zidasanzwe	MPa (RT-amanota 4)	415
Umusore Modulus	Gpa (4pt yunamye, 1300 ℃)	430
Kwagura Ubushyuhe (CTE)	10-6K-1	4.5
Amashanyarazi	(W / mK)	300